IQD016N08NM5ATMA1 vs IQE036N08NM6CGATMA1 Comparison
Detailed side-by-side comparison of IQD016N08NM5ATMA1 by Infineon and IQE036N08NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD016N08NM5ATMA1
IQD016N08NM5ATMA1 - 80V 1.6mΞ© OptiMOS 5 N-MOSFET | Infineon
IQD016N08NM5ATMA1 β ActiveInfineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IQD016N08NM5ATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 6 |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (Ta) | 31 A | β |
| Continuous Drain Current (Tc) | 323 A | β |
| On-Resistance RDS(on) typical | 1.6 mΞ© | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 333 W | β |
| Package | PG-TSON-8-9 (PQFN 5x6) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 Power-MOSFET | Trench MOSFET, OptiMOS 6 |
| Operating Temperature Range | -55C to +150C (junction, standard MOSFET rating) | -55 C to +175 C (junction, Tj) |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typical] | β |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | 80 V |
| Gate-Source Voltage (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | β | 118 A |
| Continuous Drain Current (Id) at Ta | β | 16.7 A |
| Rds(on) max at Vgs=10V | β | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V (max) |
| Power Dissipation at Tc | β | 125 W |
| Power Dissipation at Ta | β | 2.5 W |
| MSL Level | β | MSL1 (per JEDEC J-STD-020) |
| Configuration | β | Single N-channel, Source-Down |