IQD063N15NM5SCATMA1 vs ISC151N08NM6ATMA1 Comparison

Detailed side-by-side comparison of IQD063N15NM5SCATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Active

Specification Comparison

Parameter IQD063N15NM5SCATMA1 ISC151N08NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 150 V 80 V
Continuous Drain Current (ID) at TC=25°C 151 A —
Continuous Drain Current (ID) at TA=25°C 14.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) at VGS=10V 5.1 mΩ —
On-Resistance RDS(on) at VGS=4.5V 6.32 mΩ (typ) —
Gate-Source Threshold Voltage (VGS(th)) 3.8 V (max) —
Total Gate Charge (QG) at VGS=10V 48 nC —
Input Capacitance (Ciss) 3.6 nF —
Output Capacitance (Coss) 900 pF —
Reverse Transfer Capacitance (Crss) 21 pF —
Maximum Power Dissition (PD) at TC=25°C 333 W —
Maximum Power Dissition (PD) at TA=25°C 3 W —
Operating Temperature Range -55°C to +175°C —
Package PG-WHSON-8-U02 (WHSON-8 with exposed pad) PG-TDSON-8 FL
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Transistor Type — N-Channel MOSFET
Continuous Drain Current (TA=25°C) — 9.2 A
Continuous Drain Current (TC=25°C) — 37 A
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 48 W
On-Resistance RDS(on) max — 15.1 mΩ
Gate Threshold Voltage VGS(th) typ — 3.5 V
Technology — OptiMOS 6
Number of Pins — 8
Channel Mode — Enhancement
Operating Temperature — -55 °C to +175 °C

Datasheets & Resources

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