IQD063N15NM5SCATMA1 vs ISC151N08NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQD063N15NM5SCATMA1 disebabkan oleh Infineon dan ISC151N08NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQD063N15NM5SCATMA1 ISC151N08NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 150 V 80 V
Continuous Drain Current (ID) at TC=25°C 151 A —
Continuous Drain Current (ID) at TA=25°C 14.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) at VGS=10V 5.1 mΩ —
On-Resistance RDS(on) at VGS=4.5V 6.32 mΩ (typ) —
Gate-Source Threshold Voltage (VGS(th)) 3.8 V (max) —
Total Gate Charge (QG) at VGS=10V 48 nC —
Input Capacitance (Ciss) 3.6 nF —
Output Capacitance (Coss) 900 pF —
Reverse Transfer Capacitance (Crss) 21 pF —
Maximum Power Dissition (PD) at TC=25°C 333 W —
Maximum Power Dissition (PD) at TA=25°C 3 W —
Gambaran Suhu Operasi -55°C to +175°C —
Kemasan PG-WHSON-8-U02 (WHSON-8 with exposed pad) PG-TDSON-8 FL
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (TA=25°C) — 9.2 A
Arus Kumpal Tetap (TC=25°C) — 37 A
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 48 W
On-Resistance RDS(on) max — 15.1 mΩ
Gate Threshold Voltage VGS(th) typ — 3.5 V
Technology — OptiMOS 6
Bilangan Pin — 8
Channel Mode — Enhancement
Suhu Operasi — -55 °C to +175 °C

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