IQD063N15NM5SCATMA1 vs ISC151N08NM6ATMA1 Perbandingan

Perbandingan bersamaan detil IQD063N15NM5SCATMA1 dari Infineon dan ISC151N08NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQD063N15NM5SCATMA1 ISC151N08NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 150 V 80 V
Continuous Drain Current (ID) at TC=25°C 151 A —
Continuous Drain Current (ID) at TA=25°C 14.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) at VGS=10V 5.1 mΩ —
On-Resistance RDS(on) at VGS=4.5V 6.32 mΩ (typ) —
Gate-Source Threshold Voltage (VGS(th)) 3.8 V (max) —
Total Gate Charge (QG) at VGS=10V 48 nC —
Input Capacitance (Ciss) 3.6 nF —
Output Capacitance (Coss) 900 pF —
Reverse Transfer Capacitance (Crss) 21 pF —
Maximum Power Dissition (PD) at TC=25°C 333 W —
Maximum Power Dissition (PD) at TA=25°C 3 W —
Rentang Suhu Kerja -55°C to +175°C —
Paket PG-WHSON-8-U02 (WHSON-8 with exposed pad) PG-TDSON-8 FL
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (TA=25°C) — 9.2 A
Arus Alir Berlanjut (TC=25°C) — 37 A
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 48 W
On-Resistance RDS(on) max — 15.1 mΩ
Gate Threshold Voltage VGS(th) typ — 3.5 V
Technology — OptiMOS 6
Jumlah Pin — 8
Channel Mode — Enhancement
Suhu Kerja — -55 °C to +175 °C

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