IQE008N03LM5CGATMA1 vs IQE008N03LM5ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IQE008N03LM5CGATMA1 tarafından Infineon ve IQE008N03LM5ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IQE008N03LM5CGATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 27 A | — |
| Continuous Drain Current (ID) at Tc=25C | 253 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 0.85 mOhm (typ) @ 20 A | — |
| Gate-Source Voltage (VGS) Max | +/-16 V | ±20 V (typical MOSFET rating) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | 2 V (at 250 µA per LCSC snippet) |
| Total Gate Charge (Qg) at VGS=10V | 64 nC (typ) | — |
| Input Capacitance (Ciss) at VDS=15V | 5700 pF (typ) | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss typical] | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 89 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +150C (junction) | -55°C to +150°C (typical MOSFET junction rating) |
| Paket | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Montaj Türü | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (compliant per Infineon product page) | — |
| AEC-Q100 Automotive | [DATA_NEEDED: AEC-Q100 qualification status] | — |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25°C | — | 27 A |
| Continuous Drain Current (ID) at TC=25°C | — | 253 A |
| On-Resistance RDS(on) Typical | — | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 89 W |
| Technology | — | OptiMOS 5, Source-Down |
| RoHS Durumu | — | Compliant (per LCSC listing) |
| MSL Seviyesi | — | [DATA_NEEDED: MSL level] |