IQE008N03LM5CGATMA1 vs IQE008N03LM5ATMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IQE008N03LM5CGATMA1 بواسطة Infineon و IQE008N03LM5ATMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Infineon
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 ✓ نشطمقارنة المواصفات
| المعامل | IQE008N03LM5CGATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 27 A | — |
| Continuous Drain Current (ID) at Tc=25C | 253 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 0.85 mOhm (typ) @ 20 A | — |
| Gate-Source Voltage (VGS) Max | +/-16 V | ±20 V (typical MOSFET rating) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | 2 V (at 250 µA per LCSC snippet) |
| Total Gate Charge (Qg) at VGS=10V | 64 nC (typ) | — |
| Input Capacitance (Ciss) at VDS=15V | 5700 pF (typ) | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss typical] | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 89 W | — |
| نطاق درجة حرارة التشغيل | -55C to +150C (junction) | -55°C to +150°C (typical MOSFET junction rating) |
| العلبة | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| نوع التركيب | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (compliant per Infineon product page) | — |
| AEC-Q100 Automotive | [DATA_NEEDED: AEC-Q100 qualification status] | — |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25°C | — | 27 A |
| Continuous Drain Current (ID) at TC=25°C | — | 253 A |
| On-Resistance RDS(on) Typical | — | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 89 W |
| Technology | — | OptiMOS 5, Source-Down |
| حالة RoHS | — | Compliant (per LCSC listing) |
| مستوى MSL | — | [DATA_NEEDED: MSL level] |