IQE012N03LM5CGATMA1 vs IQE008N03LM5CGATMA1 Comparison
Detailed side-by-side comparison of IQE012N03LM5CGATMA1 by Infineon and IQE008N03LM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE012N03LM5CGATMA1
IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon
IQE012N03LM5CGATMA1 β ActiveInfineon
IQE008N03LM5CGATMA1
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE012N03LM5CGATMA1 | IQE008N03LM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.38 | $0.74 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID, Ta) | 34 A | β |
| Pulsed Drain Current (IDM, Tc) | 224 A | β |
| On-Resistance RDS(on), typ | 1.20 mOhm | β |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 107 W | β |
| Technology / Process | OptiMOS 5 trench | β |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +150 C (TJ) | β |
| Gate Drive (recommended) | 10 V (logic-level compatible) | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 27 A |
| Continuous Drain Current (ID) at Tc=25C | β | 253 A |
| On-Resistance (RDS(on)) at VGS=10V | β | 0.85 mOhm (typ) @ 20 A |
| Gate-Source Voltage (VGS) Max | β | +/-16 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| Total Gate Charge (Qg) at VGS=10V | β | 64 nC (typ) |
| Input Capacitance (Ciss) at VDS=15V | β | 5700 pF (typ) |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss typical] |
| Reverse Transfer Capacitance (Crss) | β | [DATA_NEEDED: Crss typical] |
| Power Dissipation (PD) at Ta=25C | β | 2.1 W |
| Power Dissipation (PD) at Tc=25C | β | 89 W |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Lead-Free / RoHS | β | Yes (compliant per Infineon product page) |
| AEC-Q100 Automotive | β | [DATA_NEEDED: AEC-Q100 qualification status] |