IQE012N03LM5CGATMA1 vs IQE008N03LM5CGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQE012N03LM5CGATMA1 sa pamamagitan ng Infineon at IQE008N03LM5CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQE012N03LM5CGATMA1 IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon

IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon

IQE012N03LM5CGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQE012N03LM5CGATMA1 IQE008N03LM5CGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID, Ta) 34 A —
Pulsed Drain Current (IDM, Tc) 224 A —
On-Resistance RDS(on), typ 1.20 mOhm —
Gate-Source Threshold VGS(th) 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 107 W —
Technology / Process OptiMOS 5 trench —
Packhaging PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55 C to +150 C (TJ) —
Gate Drive (recommended) 10 V (logic-level compatible) —
Tindminan RoHS Compliant —
Level ng MSL 1 —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 27 A
Continuous Drain Current (ID) at Tc=25C — 253 A
On-Resistance (RDS(on)) at VGS=10V — 0.85 mOhm (typ) @ 20 A
Gate-Source Voltage (VGS) Max — +/-16 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
Total Gate Charge (Qg) at VGS=10V — 64 nC (typ)
Input Capacitance (Ciss) at VDS=15V — 5700 pF (typ)
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss typical]
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 89 W
Hanay ng Temperature na Operasyon — -55C to +150C (junction)
Lead-Free / RoHS — Yes (compliant per Infineon product page)
AEC-Q100 Automotive — [DATA_NEEDED: AEC-Q100 qualification status]

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