IQE012N03LM5CGSCATMA1 vs IQE065N10NM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQE012N03LM5CGSCATMA1 by Infineon and IQE065N10NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE012N03LM5CGSCATMA1

IQE012N03LM5CGSCATMA1 - 30V 1.15mΞ© OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 βœ“ Active
Infineon
IQE065N10NM5CGSCATMA1

IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon

IQE065N10NM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQE012N03LM5CGSCATMA1 IQE065N10NM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $1.28
FET Type N-Channel β€”
Technology OptiMOS 5 (trench MOSFET) OptiMOS 5 trench-gate
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) @ Ta 34 A β€”
Continuous Drain Current (ID) @ Tc 224 A β€”
Maximum RDS(on) @ VGS=10V 1.15 mΞ© β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 107 W β€”
Gate Threshold Voltage (VGS(th)) 2 V (typ, per Merlin listing) [DATA_NEEDED: VGS(th) typical value]
Package PG-WHTFN-9-1 (PQFN 3.3 Γ— 3.3 mm Source-Down dual-side cooled) PG-WHTFN-9-1 (Source-Down)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
MSL Level 1 (per JEDEC J-STD-020, floor life unlimited) β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 5
Transistor Type β€” N-Channel MOSFET
Drain-to-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at TC=25 C β€” 85 A
Continuous Drain Current (ID) at TA β€” 13 A
On-Resistance (RDS(on)) max at VGS=10V β€” 6.5 mOhm
Power Dissipation at TA β€” 2.5 W
Power Dissipation at TC β€” 100 W
Operating Temperature Range β€” -55 C to +150 C

Datasheets & Resources

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