IQE012N03LM5CGSCATMA1 vs IQE065N10NM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQE012N03LM5CGSCATMA1 dari Infineon dan IQE065N10NM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE012N03LM5CGSCATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 5 trench-gate |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) @ Ta | 34 A | — |
| Continuous Drain Current (ID) @ Tc | 224 A | — |
| Maximum RDS(on) @ VGS=10V | 1.15 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ, per Merlin listing) | [DATA_NEEDED: VGS(th) typical value] |
| Paket | PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) | PG-WHTFN-9-1 (Source-Down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Level MSL | 1 (per JEDEC J-STD-020, floor life unlimited) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25 C | — | 85 A |
| Continuous Drain Current (ID) at TA | — | 13 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 6.5 mOhm |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 100 W |
| Rentang Suhu Kerja | — | -55 C to +150 C |