IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon
MPN: IQE065N10NM5CGSCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.21 | $2.21 |
| 10 | $2.05 | $20.50 |
| 100 | $1.78 | $178.00 |
| 500 | $1.52 | $760.00 |
| 1,000 | $1.28 | $1,280.00 |
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View Datasheet →IQE065N10NM5CGSCATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25 C | 85 A |
| Continuous Drain Current (ID) at TA | 13 A |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm |
| Power Dissipation at TA | 2.5 W |
| Power Dissipation at TC | 100 W |
| Package | PG-WHTFN-9-1 (Source-Down) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 5 trench-gate |
| Operating Temperature Range | -55 C to +150 C |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IQE065N10NM5CGSCATMA1 pg-whtfn-9-1 (source-down) Pin Configuration Guide
Complete pinout information for IQE065N10NM5CGSCATMA1 (pg-whtfn-9-1 (source-down) package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for IQE065N10NM5CGSCATMA1.
Refer to the datasheet for full pin configuration.
Safe Operating Area (DC, TC=25 C)
Typical Applications
IQE065N10NM5CGSCATMA1 is suitable for 6 applications: Server and Telecom 48V Buck Converters, Brushless DC (BLDC) Motor Drive Half-Bridge, Industrial 48V e-Fuse and Hot-Swap Controller, Synchronous Rectification in Telecom Isolated DC-DC, High-Current 24V-48V Load Switch, USB-PD and High-Power Charging Power Stages.
Server and Telecom 48V Buck Converters
The IQE065N10NM5CGSCATMA1's 100V VDS rating provides strong headroom above 48V telecom and 60V industrial buses, and its 6.5 mOhm RDS(on) at VGS=10V minimizes conduction loss in continuous-conduction buck topologies. The Source-Down PG-WHTFN-9-1 package's top-side thermal pad lets the MOSFET dissipate heat directly into a top-layer copper pour, which is critical in dense server VRs where bottom-side cooling is already saturated by other heat sources. Compared with a standard 5x6 mm DFN at the same RDS(on), the Source-Down variant typically yields 20-30% lower junction temperature at full load.
Recommended
Brushless DC (BLDC) Motor Drive Half-Bridge
The IQE065N10NM5CGSCATMA1 is well suited to the low-side switch position in a 24V-60V BLDC motor drive thanks to its 100V VDS rating, 85A TC-rated current, and OptiMOS 5's low gate charge for fast PWM edges. The Source-Down package allows the low-side FET to be cooled from the same top copper layer as the high-side FET, simplifying PCB stack-up. The body diode's avalanche rating handles back-EMF during motor commutation, though adding a small RC snubber is recommended for hard-switched edges above 20 kHz.
Recommended
Industrial 48V e-Fuse and Hot-Swap Controller
In a 48V-60V hot-swap or e-fuse circuit, the IQE065N10NM5CGSCATMA1 serves as the main pass element that must survive inrush events and short-circuit transients. The 100V VDS rating gives a comfortable 40-50% derating margin above 60V, while 6.5 mOhm RDS(on) keeps steady-state dissipation low. The Source-Down thermal path is particularly valuable here because the PCB often sits in a sealed enclosure with only top-side copper accessible for cooling. Designers should still verify the SOA curve at the expected inrush duration.
Recommended
Synchronous Rectification in Telecom Isolated DC-DC
The IQE065N10NM5CGSCATMA1's 6.5 mOhm RDS(on) and OptiMOS 5's low Qg make it ideal for the synchronous rectifier position in telecom brick converters (typically 48V input, 12V output at 200-500W). The Source-Down package allows direct attachment to top-side copper, which simplifies thermal management in the brick's dense footprint. The 100V VDS provides sufficient margin for transients on the 48V bus while keeping conduction loss under 1% of output power.
Recommended
High-Current 24V-48V Load Switch
The IQE065N10NM5CGSCATMA1 functions as a high-side or low-side load switch in industrial power distribution, where its 85A TC current rating handles inrush of large capacitive loads. The Source-Down package lets the switch dissipate heat to top-side copper, which is often the only exposed metal in a sealed industrial enclosure. A simple gate-pulldown resistor plus a TVS across the drain-source provides robust protection against inductive kickback when switching solenoids or relays.
Recommended
USB-PD and High-Power Charging Power Stages
For USB-PD 3.1 extended-power-range adapters delivering 28V/36V/48V at 100-240W, the IQE065N10NM5CGSCATMA1 serves as the synchronous rectifier on the secondary side of a flyback or active-clamp forward converter. Its 100V VDS provides a 2x safety margin above 48V output transients, while 6.5 mOhm RDS(on) keeps rectifier loss under 0.5W at 5A output. The Source-Down package's compact 3.3 mm x 3.3 mm footprint leaves room for the controller, opto-isolator, and synchronous rectifiers in adapters below 130 cc.
Recommended
Recommended Products Summary
Engineering reference data for IQE065N10NM5CGSCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQEH50NE2LM7UCGSCATMA1 | IQE220N15NM5CGSCATMA1 | IQE036N08NM6CGSCATMA1 | IQE008N03LM5SCATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9-1 (Source-Down) - same | PG-WHTFN-9-1 (Source-Down) - same | PG-WHTFN-9-1 (Source-Down) - same | PG-WHTFN-9-1 (Source-Down) - same | PG-TDSON-8 - DIFFERENT (not Source-Down) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-to-Source Voltage (VDS) | 100 V | 100 V | 150 V | 80 V | 30 V | 120 V |
| RDS(on) max at VGS=10V | 6.5 mOhm | 50 mOhm | 22 mOhm | 3.6 mOhm | 0.8 mOhm | 3.7 mOhm |
| Continuous Drain Current (TC=25 C) | 85 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (TC) | 100 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 5 | OptiMOS 7 | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 | OptiMOS 6 |
| Source-Down Architecture | Yes | Yes | Yes | Yes | Yes | No (standard DFN) |
Key Differentiators
- Source-Down architecture with top-side cooling (vs ISC037N12NM6ATMA1)
- Lower RDS(on) for the same voltage class (vs IQE220N15NM5CGSCATMA1)
- Higher voltage rating than the 80V alternative (vs IQE036N08NM6CGSCATMA1)
Design Notes
Estimated: At continuous 13A (TA-rated) with 6.5 mOhm RDS(on), conduction loss is about 1.1W. Without a top-side copper pour, the junction would rise 110 C above 25 C ambient (assuming 100 C/W RthJA on a small PCB). The Source-Down PG-WHTFN-9-1 package drops RthJA to roughly 35 C/W with 6 cm2 top-side copper, holding Tj rise near 38 C. Always provide at least 1 oz copper on the top layer directly under the source pad, plus an array of 0.3 mm thermal vias stitching to inner ground planes.
Use a 4-layer PCB with the top layer dedicated to source/down-pad copper. Stitch the source pad to inner ground planes with a 4x4 array of 0.3 mm thermal vias (1 oz copper plating). Keep the high-side drain loop area under 0.5 cm2 to minimize parasitic inductance, which can otherwise cause VDS spikes above 100V during switching. Place the gate-driver within 5 mm of the gate pin to limit gate-loop inductance below 5 nH.
Driving the gate with VGS=4.5V instead of 10V can raise RDS(on) by 2-3x, dramatically increasing conduction loss and potentially causing thermal runaway. Always verify the gate-driver output voltage under load. Also avoid exceeding the 100V VDS rating during inductive-switching transients - add a TVS or RC snubber across the drain-source if the application involves motors, solenoids, or transformers. The body diode is avalanche-rated but should not be used as a primary freewheeling path in continuous-conduction applications.
Compliance Information
RoHS compliant per Infineon product page. Halogen-free status not explicitly stated in the verified web data; marked unknown. Not AEC-Q100 qualified (industrial/consumer grade).
