IQE020N04LM6CGSCATMA1 vs IQDH35N03LM5SCATMA1 Comparison
Detailed side-by-side comparison of IQE020N04LM6CGSCATMA1 by Infineon and IQDH35N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE020N04LM6CGSCATMA1
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΞ© N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 β ActiveInfineon
IQDH35N03LM5SCATMA1
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 β ActiveSpecification Comparison
| Parameter | IQE020N04LM6CGSCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.65 | $2.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 low-voltage power MOSFET | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current at TA=25Β°C | 25 A | β |
| Continuous Drain Current at TC=25Β°C | 166 A | β |
| Maximum RDS(on) | 2.0 mΞ© (per IQE part-number decode) | β |
| Power Dissipation at TA=25Β°C | 2.5 W | β |
| Power Dissipation at TC=25Β°C | 107 W | β |
| Package | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Pin Count | 9 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction, per Infineon MOSFET convention) | -55 C to +175 C |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) | 1 (unlimited) |
| Technology | OptiMOS 6 trench | OptiMOS 5 (trench, shielded-gate) |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta | β | 66 A |
| Pulsed Drain Current (IDM) at Tc | β | 700 A |
| On-State Resistance (RDS(on)) max | β | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 278 W |
| Marking | β | IQDH35N03LM5S |