IQE020N04LM6CGSCATMA1 vs IQDH35N03LM5SCATMA1 比較
詳細並排比較 IQE020N04LM6CGSCATMA1 由 Infineon 與 IQDH35N03LM5SCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 ✓ 啟用中規格比較
| 參數 | IQE020N04LM6CGSCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 low-voltage power MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current at TA=25°C | 25 A | — |
| Continuous Drain Current at TC=25°C | 166 A | — |
| Maximum RDS(on) | 2.0 mΩ (per IQE part-number decode) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 107 W | — |
| 封裝 | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| 腳位數 | 9 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 °C to +150 °C (junction, per Infineon MOSFET convention) | -55 C to +175 C |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 等級 | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) | 1 (unlimited) |
| Technology | OptiMOS 6 trench | OptiMOS 5 (trench, shielded-gate) |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Marking | — | IQDH35N03LM5S |