IQE020N04LM6CGSCATMA1 vs ISC037N12NM6ATMA1 Comparison
Detailed side-by-side comparison of IQE020N04LM6CGSCATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE020N04LM6CGSCATMA1
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΞ© N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 β ActiveInfineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE020N04LM6CGSCATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.65 | $3.62 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS 6 low-voltage power MOSFET | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current at TA=25Β°C | 25 A | β |
| Continuous Drain Current at TC=25Β°C | 166 A | β |
| Maximum RDS(on) | 2.0 mΞ© (per IQE part-number decode) | β |
| Power Dissipation at TA=25Β°C | 2.5 W | β |
| Power Dissipation at TC=25Β°C | 107 W | β |
| Package | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) | PG-TDSON-8 FL (SuperSO8) |
| Pin Count | 9 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction, per Infineon MOSFET convention) | -55C to +175C (junction) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) | 1 (per JEDEC J-STD-020) |
| Technology | OptiMOS 6 trench | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (Vds) | β | 120 V |
| Continuous Drain Current (Id) at Ta=25C | β | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | β | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | β | 3.7 mOhm |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 214 W |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | β | Yes (single-pulse) |