IQE020N04LM6CGSCATMA1 vs ISC037N12NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE020N04LM6CGSCATMA1 disebabkan oleh Infineon dan ISC037N12NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQE020N04LM6CGSCATMA1 ISC037N12NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 6 low-voltage power MOSFET —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current at TA=25°C 25 A —
Continuous Drain Current at TC=25°C 166 A —
Maximum RDS(on) 2.0 mΩ (per IQE part-number decode) —
Power Dissipation at TA=25°C 2.5 W —
Power Dissipation at TC=25°C 107 W —
Kemasan PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) PG-TDSON-8 FL (SuperSO8)
Kiraan Pin 9 —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +150 °C (junction, per Infineon MOSFET convention) -55C to +175C (junction)
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) 1 (per JEDEC J-STD-020)
Technology OptiMOS 6 trench OptiMOS 6 (N-channel trench MOSFET)
Drain-Source Voltage (Vds) — 120 V
Continuous Drain Current (Id) at Ta=25C — 19.2 A
Pulsed Drain Current (Idm) at Tc — 163 A
On-Resistance Rds(on) typ at Vgs=10V — 3.7 mOhm
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 214 W
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ — [DATA_NEEDED: Qg total]
Avalanche Energy Rated — Yes (single-pulse)

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