IQE020N04LM6CGSCATMA1 vs ISC037N12NM6ATMA1 Comparación
Comparación detallada lado a lado de IQE020N04LM6CGSCATMA1 por Infineon y ISC037N12NM6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IQE020N04LM6CGSCATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,65 | $3,62 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 6 low-voltage power MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current at TA=25°C | 25 A | — |
| Continuous Drain Current at TC=25°C | 166 A | — |
| Maximum RDS(on) | 2.0 mΩ (per IQE part-number decode) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 107 W | — |
| Encapsulado | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) | PG-TDSON-8 FL (SuperSO8) |
| Recuento de pines | 9 | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (junction, per Infineon MOSFET convention) | -55C to +175C (junction) |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nivel MSL | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) | 1 (per JEDEC J-STD-020) |
| Technology | OptiMOS 6 trench | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (Vds) | — | 120 V |
| Continuous Drain Current (Id) at Ta=25C | — | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | — | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | — | 3.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 214 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | — | Yes (single-pulse) |