IQE022N06LM5CGSCATMA1 - 60V 151A OptiMOS 5 N-FET | Infineon
MPN: IQE022N06LM5CGSCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.88 | $28.80 |
| 100 | $2.55 | $255.00 |
| 500 | $2.28 | $1,140.00 |
| 1,000 | $2.05 | $2,050.00 |
IQE022N06LM5CGSCATMA1 Overview
What is an N-Channel MOSFET? An N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch where current flows between drain and source when a positive gate-source voltage is applied above the threshold. Power MOSFETs like the OptiMOS 5 family sit in the hierarchy of discrete semiconductors -> transistors -> MOSFETs -> trench MOSFETs, where lower on-resistance translates directly into lower conduction losses and higher efficiency in switching regulators and motor drives.
Key features include 2.2 mOhm maximum RDS(on) at VGS=10V, 60V drain-source breakdown voltage, 151A continuous drain current at TC (24A at Ta per DigiKey), and a 100W maximum power dissipation rating. The PG-WHTFN-9 package offers an exposed thermal pad for low thermal resistance, enabling sustained high-current operation. OptiMOS 5 technology provides superior switching performance with low gate charge, reducing driver losses in high-frequency applications.
Technical depth: the device uses trench-gate architecture optimized for low figure-of-merit (FOM = RDS(on) x Qg). The result is a MOSFET capable of high-frequency switching (>500 kHz) without excessive driver losses. The PG-WHTFN-9 package's source-down configuration enables direct PCB heatsinking via copper pours.
Typical applications include 48V telecom and server DC-DC converters, motor drives, synchronous rectification in SMPS, battery management systems, and load switching in industrial automation. The combination of low RDS(on) and high current rating suits point-of-load converters delivering >50A per phase.
Design consideration: maintain VGS above 10V for full enhancement. Use a gate-driver with sufficient peak current (>1A) to charge the input capacitance quickly. PCB layout requires minimal source-loop inductance - place input capacitors directly across drain and source pads.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IQE022N06LM5CGSCATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQE022N06LM5CGSCATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Pin Count.
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View Datasheet →IQE022N06LM5CGSCATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (TC) | 151 A |
| Continuous Drain Current (TA) | 24 A |
| Maximum Power Dissipation (TC) | 100 W |
| Maximum Power Dissipation (TA) | 2.5 W |
| RDS(on) Maximum at VGS=10V | 2.2 mOhm |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) |
| Package | PG-WHTFN-9 (5x6 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C |
| Technology Family | OptiMOS 5 |
| Pin Count | 9 (PG-WHTFN-9) |
| RoHS Status | Compliant |
IQE022N06LM5CGSCATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input (VGS drive) |
| Pin 2 | Source — Source connection (internally connected to thermal pad) |
| Pin 3 | Source — Source connection (internally connected to thermal pad) |
| Pin 4 | Source — Source connection (internally connected to thermal pad) |
| Pin 5 | Source — Source connection (internally connected to thermal pad) |
| Pin 6 | Source — Source connection (internally connected to thermal pad) |
| Pin 7 | Drain — Drain connection |
| Pin 8 | Drain — Drain connection |
| Pin 9 | Drain — Drain connection / Thermal pad |
Safe Operating Area (DC)
Typical Applications
IQE022N06LM5CGSCATMA1 is suitable for 6 applications: 48V Telecom/Server DC-DC Converters, Synchronous Rectification in SMPS, Battery Management Systems (BMS), Motor Drive and Inverters, Load Switching and Hot-Swap, Point-of-Load (POL) Converters.
48V Telecom/Server DC-DC Converters
The IQE022N06LM5CGSCATMA1 fits 48V telecom and server DC-DC converters due to its 60V VDS rating (sufficient margin above 48V nominal), 2.2 mOhm RDS(on), and 151A TC continuous current. Its low figure-of-merit (FOM = RDS(on) x Qg) from OptiMOS 5 technology reduces switching losses at 100-500 kHz switching frequencies, enabling >97% efficiency in multi-kW server power supplies. Used as synchronous rectification MOSFET in buck stages, it dissipates significantly less heat than older planar MOSFETs, allowing higher power density in 1U/2U server chassis.
Recommended
Synchronous Rectification in SMPS
As a low-side synchronous rectifier in switched-mode power supplies, IQE022N06LM5CGSCATMA1's 2.2 mOhm RDS(on) and high current capability minimize body-diode conduction and enable higher efficiency than diode-based rectification. The OptiMOS 5 trench silicon provides fast body-diode reverse recovery, reducing dead-time losses in half-bridge topologies. Engineers designing 1-3 kW SMPS for industrial or server applications benefit from this part's low thermal resistance and source-down package that enables direct PCB copper heatsinking without external heatsinks.
Recommended
Battery Management Systems (BMS)
The IQE022N06LM5CGSCATMA1 fits battery management systems in 48V lithium battery packs and e-mobility applications, where its 60V rating covers multi-cell battery stacks with safety margin. With 151A continuous current capability, it can handle high-C discharge events and bidirectional charging without thermal stress. The low RDS(on) reduces I2R losses during high-current charging cycles, improving system round-trip efficiency. Its PG-WHTFN-9 package supports surface-mount assembly compatible with automated BMS PCB manufacturing.
Recommended
Motor Drive and Inverters
For BLDC motor drives and small inverters up to 5 kW, the IQE022N06LM5CGSCATMA1 serves as the high-side or low-side switching element in three-phase inverter bridges. Its 60V VDS rating suits 24V and 48V battery-powered motors, while the 2.2 mOhm RDS(on) minimizes torque ripple and conduction losses. The OptiMOS 5 family delivers fast switching (low Qg) for PWM frequencies up to 50 kHz, enabling quieter motor operation. Source-down PG-WHTFN-9 package allows direct PCB copper heatsinking for sustained motor current.
Recommended
Load Switching and Hot-Swap
In hot-swap and load-switching circuits for 48V backplanes, the IQE022N06LM5CGSCATMA1 functions as the inrush-current-limiting element. Its high pulsed current capability handles transient inrush events when downstream bulk capacitors charge, while the 2.2 mOhm RDS(on) keeps steady-state voltage drop below 100 mV at 50A continuous load. OptiMOS 5 technology provides robust avalanche ruggedness for transient over-voltage events during hot-plug, making it suitable for enterprise server and networking equipment hot-swap designs.
Recommended
Point-of-Load (POL) Converters
For high-current point-of-load converters delivering >50A at 0.8-3.3V from a 12V or 48V intermediate bus, the IQE022N06LM5CGSCATMA1 enables multi-phase buck topologies. Each phase handles 30-50A continuous with 2.2 mOhm RDS(on), and paralleling multiple MOSFETs per phase reduces total conduction loss proportionally. The OptiMOS 5 family's low gate charge supports >500 kHz switching, reducing output inductor and capacitor size for compact POL designs in FPGA, ASIC, and processor power delivery applications.
Recommended
Recommended Products Summary
Engineering reference data for IQE022N06LM5CGSCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQE018N06NM6CGATMA1 | IQDH88N06LM5CGSCATMA1 | IQDH29NE2LM5CGSCATMA1 | IQE050N08NM5CGATMA1 | ISC015N06NM5ATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-WHTFN-9 (5x6 mm) | PG-WHTFN-9 (5x6 mm) - same | PG-WHTFN-9 (5x6 mm) - same | PG-WHTFN-9 (5x6 mm) - same | PG-WHTFN-9 (5x6 mm) - same | PG-WHTFN-9 (5x6 mm) - same | PG-WHTFN-9 (5x6 mm) - same |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 80 V | 60 V | 80 V | 60 V | 100 V |
| Technology Family | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- Highest continuous drain current at TC in 60V OptiMOS 5 family (vs IQE018N06NM6CGATMA1)
- 60V rating with 2.2 mOhm RDS(on) - balanced for 48V bus (vs IQDH88N06LM5CGSCATMA1)
- PG-WHTFN-9 source-down package for direct PCB heatsinking (vs ISC015N06NM5ATMA1)
Design Notes
The PG-WHTFN-9 package is source-down with an exposed thermal pad. Maximum power dissipation is 100W at TC (case temperature 25C), but this drops rapidly as TC rises above 100C due to thermal derating. For continuous 50A operation, mount the device on a minimum 1 square inch (645 mm^2) copper pour on top and bottom PCB layers with thermal vias (0.3mm diameter, 1mm pitch) connecting them. Without adequate cooling, expect TC to rise 50-60C above ambient at 50A load, which can push the junction beyond the 150C absolute maximum if ambient is already elevated.
Layout for high-current switching requires minimizing source-loop inductance. Place input bypass capacitors (10uF X7R + 0.1uF NP0 in parallel) within 2mm of the drain-source pads. Use wide copper pours (>= 2oz thickness recommended) for drain and source connections. The gate trace should be kept short (<10mm) and routed away from the switching node to avoid capacitive coupling that causes Miller-induced turn-on. A 10-ohm gate resistor dampens ringing and limits peak gate current.
For half-bridge or synchronous buck topologies, use a kelvin source connection (separate source-sense trace back to the gate driver ground) when possible to eliminate the effects of source inductance on gate drive. The PG-WHTFN-9 package has multiple source pins (2-6) that should all be soldered to the PCB for lowest thermal resistance and best current sharing. The drain pins (7-9) connect directly to the thermal pad for heat extraction.
Do not exceed the 60V VDS absolute maximum - ringing from parasitic inductance in switching converters can easily add 20-30% overshoot. Use a snubber (RC or RCD) across the MOSFET if ringing exceeds 80% of VDS. Also ensure VGS does not exceed +/-20V; many gate drivers output >12V, so check the driver's absolute maximum before connecting. Operating below VGS(th) (typically 2.3V) results in linear-region operation with high dissipation - the MOSFET must be fully enhanced at VGS >= 10V for best RDS(on).
When switching >50A at >100 kHz, gate-drive integrity becomes critical. Use a gate driver with peak current capability >1A (such as Infineon 1ED020I12B2XUMA1 or 2EDN7533RXTMA1) to charge the MOSFET's input capacitance quickly. Slow gate rise times increase switching losses and cause cross-conduction in half-bridge configurations. For PWM dimming or variable-frequency operation, ensure the gate driver can source/sink the required dV/dt current (Ciss x dV/dt).
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified (industrial/telecom grade, not automotive). Halogen-free and lead-free per Infineon OptiMOS 5 family datasheet.
