IQE036N08NM6ATMA1 - 80V OptiMOS 6 N-MOSFET, 3.6mΩ | Infineon
MPN: IQE036N08NM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.21 | $605.00 |
| 1,000 | $1.08 | $1,080.00 |
| 5,000 | $0.92 | $4,600.00 |
IQE036N08NM6ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for switching and amplifying electronic signals in power conversion applications. It belongs to the broader category of discrete semiconductors, sitting within the power MOSFET family that itself is a subset of transistors. Power MOSFETs are fundamental building blocks in switch-mode power supplies (SMPS), motor drives, DC-DC converters, and battery protection circuits, where their low on-resistance minimizes conduction losses and high switching speed reduces switching losses.
The IQE036N08NM6ATMA1 is rated for 80V drain-to-source voltage (VDS), with pulsed drain current up to several hundred amps and gate threshold voltage typically in the 1-3V range. Key technical features include low RDS(on) of 3.6 mΩ at VGS=10V, low gate charge (Qg) for fast switching, an integrated source-down configuration that improves thermal dissipation to the PCB, and avalanche-rated single-pulse capability. The Source-Down package places the source potential on the exposed pad, enabling direct top-side cooling.
The OptiMOS 6 platform represents Infineon's latest-generation trench MOSFET technology, delivering a 30-40% RDS(on) improvement over the prior OptiMOS 5 generation in the same footprint. This enables higher power density designs, smaller magnetics, and cooler operation. The technology is qualified to JEDEC standards and supports harsh-environment industrial and automotive use cases.
Typical applications include 48V e-fuse and hot-swap circuits in telecom and AI server power distribution, high-current synchronous rectification in isolated and non-isolated DC-DC converters, battery management system (BMS) protection in 48V mild-hybrid and battery-powered tools, USB Power Delivery (PD) sink/source switches, and motor drive half-bridges for e-bikes, drones, and small robotics. The combination of low RDS(on) and Source-Down thermal architecture suits these high-current-density use cases.
Design consideration: ensure the gate drive voltage reaches at least 10V (VGS(th) typical 2V) for full enhancement; a dedicated gate driver IC (e.g. UCC27211) is recommended over a logic-level GPIO. Source-down layout requires placing thermal vias directly under the exposed pad to the inner power plane, and the gate return (Kelvin source connection) must be tied to the source pad rather than the power-source trace to avoid gate-bounce induced turn-on.
This page synthesizes distributor pricing, parametric drop-in alternatives, and PCB layout design notes specific to the Source-Down PQFN 3.3x3.3 footprint that are not consolidated in the manufacturer datasheet.
Drop-in alternatives for IQE036N08NM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQE036N08NM6ATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, MSL Level, Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQE036N08NM6CGATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IQE036N08NM6ATMA2
✅ Drop-In📋 Reference alternative (not in catalog)
IAUCN08S7L033ATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →ISC151N08NM6ATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →IAUCN10S5L280DATMA1
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →ISC015N06NM5ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →IQE036N08NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 |
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at Ta | 16.7 A |
| Continuous Drain Current (ID) at Tc | 118 A |
| On-Resistance RDS(on) typical | 3.6 mΩ |
| Power Dissipation at Ta | 2.5 W |
| Power Dissipation at Tc | 125 W |
| Package | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55°C to +150°C (junction, per datasheet) |
| RoHS Status | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse, per datasheet) |
IQE036N08NM6ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (Kelvin source recommended for gate return) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input (10V nominal for full enhancement) |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Drain — Drain connection (also exposed bottom pad = Source in Source-Down config) |
Safe Operating Area (DC, Tc=25°C)
Typical Applications
IQE036N08NM6ATMA1 is suitable for 6 applications: 48V Telecom and AI Server Hot-Swap / e-Fuse, Synchronous Rectification in 48V-to-PoL DC-DC Converters, Battery Management System (BMS) Protection Switch, USB Power Delivery (PD) Sink/Source Switch, Motor Drive Half-Bridge for Drones and e-Bikes, Industrial 24V-60V High-Current Load Switch.
48V Telecom and AI Server Hot-Swap / e-Fuse
The IQE036N08NM6ATMA1's 3.6 mΩ typical RDS(on) and 80V VDS rating make it well-suited to 48V telecom bus hot-swap and AI-server e-fuse circuits. The Source-Down PQFN 3.3x3.3 package keeps junction temperature low under continuous 30-50A hot-swap currents because the source pad dissipates directly to the PCB ground plane. The 118A continuous drain current at Tc provides ample margin for 2x parallel-device current sharing at 60A per device. Use it as the main switching element between the 48V backplane and downstream POL converters, with a hot-swap controller (e.g. LM5060 or LTC4217) managing inrush. Pair with IAUCN08S7L033ATMA1 for second-source qualification.
Recommended
Synchronous Rectification in 48V-to-PoL DC-DC Converters
Place IQE036N08NM6ATMA1 as the low-side synchronous rectifier in 48V-to-12V or 48V-to-5V isolated and non-isolated DC-DC converters. The 3.6 mΩ RDS(on) minimizes secondary-side conduction loss, which dominates efficiency at high load currents above 20A. The Source-Down package enables top-side PCB cooling that complements the primary-side MOSFET's bottom-side cooling, allowing symmetric thermal distribution on a single PCB layer. The OptiMOS 6 low Qg (gate charge) reduces switching loss at 100-300 kHz switching frequencies common in 48V bus converters. Result: full-load efficiency gains of 1-2% vs OptiMOS 5 designs.
Recommended
Battery Management System (BMS) Protection Switch
In 48V mild-hybrid and high-power battery-powered tool BMS designs, the IQE036N08NM6ATMA1 functions as the high-side or low-side battery disconnect switch. The 80V VDS rating covers 48V nominal packs (16S Li-ion) plus transient spike margin; the 118A continuous current handles continuous discharge in 2kW-class e-bike and e-mobility packs. The Source-Down footprint supports direct PCB-to-pack-tray thermal coupling when the MOSFET is mounted on the BMS board adjacent to the cell sense resistors. Combined with the AEC-Q100 grade option (CG variant), this part is a strong candidate for both industrial BMS and automotive mild-hybrid applications.
Recommended
USB Power Delivery (PD) Sink/Source Switch
The IQE036N08NM6ATMA1 is well-matched to high-power USB PD 3.1 EPR (Extended Power Range) sinks and sources that deliver 28V, 36V, or 48V at 5A (140W-240W). Its 80V VDS rating provides sufficient headroom for 48V EPR outputs and AC-line-coupled surge transients. The 3.6 mΩ RDS(on) keeps conduction loss below 1W at full 5A output, enabling compliance with USB-IF efficiency requirements. The Source-Down PQFN 3.3x3.3 footprint allows tight PCB integration next to Type-C connectors and PD controller ICs. Pair with a USB PD controller (e.g. FUSB3307 or CYPD3170) for complete EPR solution.
Recommended
Motor Drive Half-Bridge for Drones and e-Bikes
Use IQE036N08NM6ATMA1 in the half-bridge or three-phase inverter stages of small e-mobility drives (e-bike controllers, drone ESCs, robotic actuators). At 36-48V battery input, the 80V VDS rating handles back-EMF spikes from BLDC motors with comfortable margin. The 118A continuous current supports 5-10 kW peak power levels for short-duration motor acceleration. The Source-Down package improves PCB thermal performance in enclosed IPM-style modules. Pair with a three-phase gate driver (e.g. 2EDL8024G4CXTMA1 or IRS2104SPBF) for complete motor drive stage. This part is an alternative to traditional D2PAK MOSFETs in space-constrained motor controllers.
Recommended
Industrial 24V-60V High-Current Load Switch
In industrial PLC I/O modules, factory-automation power distribution, and high-side load switches for 24V-60V field-bus rails, the IQE036N08NM6ATMA1 provides a compact low-RDS(on) switching solution. Its Source-Down package enables dense multi-channel switch arrays on a single PCB; eight channels can be placed in the space of four D2PAK parts. The 80V VDS rating tolerates 24V and 48V industrial buses plus IEC 61000-4-5 surge transients. Use it in conjunction with digital isolators (e.g. 1ED3142MC12HXUMA1) and gate drivers for galvanically-isolated high-side switches meeting IEC 61131-2 industrial I/O standards.
Recommended
Recommended Products Summary
Engineering reference data for IQE036N08NM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQE036N08NM6CGATMA1 | IAUCN08S7L033ATMA1 | ISC151N08NM6ATMA1 | IAUCN10S5L280DATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PQFN 3.3x3.3 Source-Down (PG-TSON-8-5) | PQFN 3.3x3.3 Source-Down (PG-TSON-8-5) - same | PQFN 3.3x3.3 Source-Down (PG-TSON-8-5) - same | PQFN 3.3x3.3 Source-Down (PG-TSON-8-5) - same | PQFN 3.3x3.3 Source-Down (PG-TSON-8-5) - same | PQFN 3.3x3.3 Source-Down (PG-TSON-8-5) - same |
| VDS max | 80 V | 80 V | 80 V | 80 V | 100 V | 60 V |
| RDS(on) typical | 3.6 mΩ | 3.6 mΩ | ~4 mΩ | ~5.1 mΩ | ~2.8 mΩ | ~1.5 mΩ |
| Automotive Grade | No (commercial) | Yes (AEC-Q100) | Yes (AEC-Q100) | No | Yes (AEC-Q100) | No |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 7 | OptiMOS 6 | OptiMOS 7 | OptiMOS 5 |
Key Differentiators
- Lowest typical RDS(on) in 80V OptiMOS 6 3.3x3.3 Source-Down class (vs ISC151N08NM6ATMA1)
- Source-Down thermal architecture enables top-side cooling (vs BSC019N08NS5ATMA1 (standard bottom-cooled PQFN))
- Automotive-qualified drop-in via CG variant (vs ISZ230N10NM6ATMA1 (100V non-automotive))
- Wide SOA for hot-swap fault-current handling (vs ISC015N06NM5ATMA1 (60V OptiMOS 5))
Design Notes
Source-Down package architecture requires the bottom exposed pad to be soldered directly to a Source copper plane, not a Drain plane as in standard MOSFETs. Place a thermal via array (0.3mm drill, 0.6mm pitch, 25-49 vias minimum) directly under the exposed pad to the inner-layer Source plane. Use 2oz outer copper on Source and Drain pads to maximize thermal spreading. Without this thermal via array, junction-to-ambient thermal resistance (θJA) will exceed 50°C/W, severely limiting continuous current capability.
Use a Kelvin source connection for the gate return to avoid gate-bounce induced turn-on in high-di/dt switching applications. Tie the gate driver return directly to the Source pad pin (pin 1 typically) using a separate trace, NOT to the power source copper. Route the gate drive trace as a 50Ω microstrip if trace length exceeds 5mm; add a 10Ω gate series resistor to dampen ringing. Keep gate trace away from drain switching node to minimize dv/dt coupling into the gate.
Do not exceed 80V VDS - inductive transients from motor windings or transformer leakage inductance can easily exceed this rating. Add a TVS clamp (e.g. 75V SMBJ) or RC snubber (10Ω + 100nF) across the drain-source for inductive loads. Ensure VGS does not exceed ±20V absolute maximum; a gate-source Zener clamp (15V) is recommended for gate-driver fault protection. Verify the datasheet SOA curve before operating in linear-mode hot-swap applications above 50% VDS rating.
Estimated: at continuous ID=20A and RDS(on)=3.6 mΩ, conduction loss is P=I²R = 20² × 0.0036 = 1.44W. With Source-Down package θJA of approximately 40°C/W on a 4-layer 2oz PCB with thermal via array, junction temperature rise above ambient is 1.44 × 40 = 58°C, keeping Tj well below the 150°C maximum. At 50A continuous, P=9W and ΔT=360°C - operation above ~30A continuous requires either substantial PCB copper area or active cooling.
Gate drive requirements: VGS(th) is typically 2V but full RDS(on) requires VGS=10V. Use a dedicated gate driver (e.g. UCC27211, 2EDN7434RXTMA1, or IRS2104SPBF) capable of sourcing/sinking 2-4A peak gate current. Switching loss is dominated by Qg (gate charge) at switching frequencies above 100 kHz; OptiMOS 6's reduced Qg vs OptiMOS 5 yields 30-40% switching loss reduction. For half-bridge configurations, add 5-10ns deadtime to prevent shoot-through.
Compliance Information
RoHS and REACH compliant per Infineon product page. Commercial grade - for AEC-Q100 automotive applications use IQE036N08NM6CGATMA1 (same die). JEDEC JESD22 qualified for MSL1 moisture sensitivity. Lead-free and halogen-free per Infineon OptiMOS 6 family datasheet.
