IQE050N08NM5CGSCATMA1 vs IQE220N15NM5CGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE050N08NM5CGSCATMA1 disebabkan oleh Infineon dan IQE220N15NM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE220N15NM5CGSCATMA1 IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE050N08NM5CGSCATMA1 IQE220N15NM5CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS 5 (trench) OptiMOS 5, Source-Down
Drain-Source Voltage (VDS) 80 V 150 V
Continuous Drain Current (ID) at TC 99 A —
Continuous Drain Current (ID) at TA 16 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 5.0 mOhm —
Gate Threshold Voltage VGS(th) typ 3.8 V —
Gate Charge Qg typ [DATA_NEEDED: total gate charge] —
Total Power Dissipation at TC (PD) 100 W —
Total Power Dissipation at TA (PD) 2.5 W —
Gambaran Suhu Operasi -55C to +175C (junction, typical) -55C to +150C (junction)
Kemasan PG-WHTFN-9-1 (Source-Down) PG-WHTFN-9 (Source-Down)
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / RoHS Lead-free, RoHS compliant —
Aras MSL 1 —
Manufacturer — Infineon Technologies
Series — OptiMOS 5
Continuous Drain Current at Ta (ID) — 7 A
Continuous Drain Current at Tc (ID) — 44 A
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 100 W
On-Resistance (RDS(on)) — 22 milliohm (max)
Gate Threshold Voltage (VGS(th)) — 4.6 V
Status RoHS — Compliant

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