IQE220N15NM5ATMA1 vs IQDH88N06LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE220N15NM5ATMA1 by Infineon and IQDH88N06LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE220N15NM5ATMA1
IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon
IQE220N15NM5ATMA1 β ActiveInfineon
IQDH88N06LM5CGSCATMA1
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΞ© | Infineon
IQDH88N06LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE220N15NM5ATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $2.31 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 Power-Transistor | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 150 V | β |
| Continuous Drain Current (ID) at Ta | 7 A | β |
| Continuous Drain Current (ID) at Tc | 44 A | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 100 W | β |
| RDS(on) Max at VGS=10V | 22 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 Β΅A) | β |
| Total Gate Charge (Qg) | 14.4 nC at 10 V | β |
| Input Capacitance (Ciss) | 14 pF | β |
| Output Capacitance (Coss) | 340 pF | β |
| Output Configuration | Single N-Channel | β |
| Package | PG-TSON-8-5 (Source-Down) | PG-WHTFN-9-U02 (PQFN 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5 (trench) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | β | 60 V |
| Continuous Drain Current (Ta=25Β°C) | β | 42 A |
| Continuous Drain Current (Tc=25Β°C) | β | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | β | 0.86 mΞ© |
| Power Dissipation (Ta=25Β°C) | β | 3 W |
| Power Dissipation (Tc=25Β°C) | β | 333 W |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | β | [DATA_NEEDED: Qg typical nC] |
| Operating Temperature Range | β | -55Β°C to +175Β°C (TJ) |
| Pin Count | β | 9 (with exposed pad) |
| Cooling | β | Dual-side cooling capable |
| Polarity | β | N-Channel |
| Configuration | β | Single |