IQE220N15NM5CGATMA1 - 150V 44A N-Ch OptiMOS 5 MOSFET | Infineon
MPN: IQE220N15NM5CGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.07 | $30.70 |
| 100 | $2.61 | $261.00 |
| 500 | $2.18 | $1,090.00 |
| 1,000 | $1.84 | $1,840.00 |
| 5,000 | $1.55 | $7,750.00 |
IQE220N15NM5CGATMA1 Overview
An N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage inverts an n-type channel and permits electron flow from drain to source. In the power-management taxonomy, this part belongs to the discrete MOSFET family, which sits under power semiconductors, used for switching and synchronous-rectification roles in SMPS, motor drives, and server/telecom power rails.
Key features include 22 mOhm maximum RDS(on), a Source-Down package topology that pulls the source potential to the top side for superior thermal dissipation and simplified PCB layout, and 100 W continuous power dissipation at the case. The TTFN-9 footprint also features a large exposed drain pad that enables direct PCB heat-sinking with minimal thermal resistance. Gate threshold is optimized for standard 10 V drive.
The device is built on Infineon's OptiMOS 5 trench process, which reduces gate charge (Qg) and output capacitance (Coss) compared with prior generations, thereby cutting switching-related losses at high frequency. The Source-Down arrangement lowers package parasitic source inductance and improves current-handling symmetry between paralleled MOSFETs, an important consideration for high-current multiphase converters.
Typical applications include primary-side switches in telecom and server SMPS, synchronous-rectification MOSFETs in 48 V DC-DC converters, half-bridge stages in industrial motor drives, and hot-swap controllers in 12 V / 24 V distributed-power architectures. The 150 V rating provides ample margin above 100 V continuous input rails, improving reliability during transient spikes.
When designing with this part, place the Source-Down source pad on the top copper layer with multiple thermal vias to inner copper planes to maximize heat extraction. Use a low-inductance gate-drive loop and a Kelvin-source connection where the package permits to prevent dynamic RDS(on) degradation. This page synthesizes distributor pricing, drop-in alternatives, and design notes not found in the manufacturer datasheet.
Drop-in alternatives for IQE220N15NM5CGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQE220N15NM5CGATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, MSL Level, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQE220N15NM5ATMA1
✅ Drop-In✓ In Stock
$0.84 / Unit
View Datasheet →IQE220N15NM5CGSCATMA1
✅ Drop-In✓ In Stock
$2.18 / Unit
View Datasheet →IQE050N08NM5CGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.75 / Unit
View Datasheet →IQE036N08NM6CGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.82 / Unit
View Datasheet →IQE065N10NM5CGSCATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.28 / Unit
View Datasheet →IQE220N15NM5CGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Tc | 44 A |
| On-State Resistance RDS(on) max | 22 mOhm |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 100 W |
| Package | PG-TTFN-9-3 (Source-Down) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C (estimated from Tj max) |
| Technology | Trench MOSFET, OptiMOS 5 |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Pin Count | 9 (TTFN) |
IQE220N15NM5CGATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input (10 V drive typical) |
| Pin 2 | SENSE — Kelvin source connection for gate-drive return |
| Pin 3 | NC — Not connected (per datasheet) |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | NC — Not connected (per datasheet) |
| Pin 9 | NC — Not connected (per datasheet) |
| Pin PAD | DRAIN / SOURCE (Source-Down) — Source-Down top pad - large thermal pad for heat extraction and primary current path |
Safe Operating Area (estimated based on datasheet ratings)
Typical Applications
IQE220N15NM5CGATMA1 is suitable for 6 applications: 48 V Telecom SMPS Primary Switch, Server 54 V Synchronous Rectifier, Industrial Motor Drive Half-Bridge, Hot-Swap / eFuse for 100 V Distribution, Solar Inverter DC-DC Stage, Battery Formation & Test Equipment.
48 V Telecom SMPS Primary Switch
The IQE220N15NM5CGATMA1 is well-suited as the primary-side switch in 48 V telecom isolated DC-DC converters. Its 150 V VDS rating provides 2-3x transient headroom above the nominal 54 V telecom input rail, while 22 mOhm RDS(on) minimizes conduction loss at full load. The Source-Down PG-TTFN-9-3 package enables top-side copper cooling, which is critical in 1U/2U rectifier modules where both sides of the PCB are used for power flow. In a 500 W full-bridge topology running at 200 kHz, the OptiMOS 5 trench process lowers switching loss versus prior generations, contributing measurable efficiency gains at partial load. Pair with a UCC28951 controller for phase-shifted full-bridge control with adaptive dead-time optimization.
Recommended
Server 54 V Synchronous Rectifier
In 48 V-to-12 V or 54 V-to-12 V point-of-load converters for hyperscale servers, the IQE220N15NM5CGATMA1 serves as the synchronous-rectifier MOSFET on the secondary side. The Source-Down package aligns the high-current source-return path on the top copper layer, dramatically reducing parasitic source inductance that would otherwise slow switching and cause voltage overshoot. With 44 A continuous rating and 22 mOhm RDS(on), a single device handles 1 kW secondary-side current at high efficiency. Combined with the OptiMOS 5 low-Qg characteristic, this part enables 100 kHz+ switching frequencies needed for high-power-density server VR designs. Companion gate driver: UCC24612 synchronous-rectifier controller.
Recommended
Industrial Motor Drive Half-Bridge
The IQE220N15NM5CGATMA1 is ideal for the half-bridge stages of industrial 100 V-class BLDC and servo motor drives. Its 150 V VDS rating covers back-EMF transients from 96 V bus systems with margin, while the 44 A continuous rating supports drives up to approximately 5 kW without paralleling. The Source-Down TTFN package enables direct top-side copper cooling in confined motor-control enclosures where bottom-side cooling is impractical. The OptiMOS 5 trench technology reduces dead-time losses by enabling faster turn-on/turn-off, which directly improves PWM waveform fidelity and reduces torque ripple in field-oriented control (FOC) loops. Pair with IRS2104STRPBF or 2EDL8124GXUMA1 gate drivers for high-side/low-side drive.
Recommended
Hot-Swap / eFuse for 100 V Distribution
In 100 V-class hot-swap and electronic-fuse circuits for industrial equipment, the IQE220N15NM5CGATMA1 serves as the main pass-MOSFET protecting downstream circuitry from inrush currents and short-circuit events. The 150 V VDS rating provides 50% headroom above continuous bus voltage, while 22 mOhm RDS(on) keeps continuous conduction loss low at full load. The Source-Down package allows the hot-swap heatsink to be mounted on the top side, simplifying thermal management in dense backplane systems. During a fault event, the part's robust avalanche rating and Source-Down low-inductance design limit voltage overshoot, improving reliability. Companion controller: LTC4283 or hot-swap manager IC for sequenced startup.
Recommended
Solar Inverter DC-DC Stage
In photovoltaic string inverters operating at 100 V-150 V DC bus voltages, the IQE220N15NM5CGATMA1 functions as the primary switch in boost or interleaved DC-DC converter stages. The 150 V VDS rating handles the maximum power-point voltage of 100 V-class PV strings with transient margin, while 44 A continuous rating supports string currents up to approximately 12-15 A at full power. The Source-Down PG-TTFN-9-3 package facilitates top-side cooling via aluminum substrate or insulated metal substrate PCB commonly used in solar inverter designs. OptiMOS 5 low gate charge reduces driver losses, critical for high-frequency interleaved topologies targeting compact magnetic designs.
Recommended
Battery Formation & Test Equipment
In battery formation cycling and test equipment used for lithium-ion cell manufacturing, the IQE220N15NM5CGATMA1 serves as the linear or switching pass-element controlling charge and discharge currents to individual cells. Its 150 V VDS rating allows series-stacks of multiple cells to be tested from a single switching stage, while the 44 A continuous rating supports high-current formation protocols required for capacity grading. The Source-Down package's top-side cooling is advantageous in densely packed cell-fixture assemblies where air flow is limited. The OptiMOS 5 trench technology provides precise analog-grade switching characteristics, important for the accurate current control needed during formation cycling.
Recommended
Recommended Products Summary
Engineering reference data for IQE220N15NM5CGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQE220N15NM5ATMA1 | IQE220N15NM5CGSCATMA1 | IQE050N08NM5CGATMA1 | IQE036N08NM6CGATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TTFN-9-3 (Source-Down) | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN (similar Source-Down family) | PG-TTFN (similar Source-Down family) | PG-TTFN (similar Source-Down family) |
| Drain-to-Source Voltage (VDS) | 150 V | 150 V | 150 V | 80 V | 80 V | 100 V |
| Continuous Drain Current (ID) | 44 A | 44 A | 44 A | 50 A (estimated, 80 V class) | 36 A (estimated, 80 V class) | 65 A (estimated, 100 V class) |
| On-State Resistance RDS(on) | 22 mOhm | 22 mOhm | 22 mOhm | 5.0 mOhm (estimated) | 3.6 mOhm (estimated) | 6.5 mOhm (estimated) |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (trench) | OptiMOS 5 (trench) | OptiMOS 5 (trench) | OptiMOS 6 (trench, newer gen) | OptiMOS 5 (trench) |
| Source-Down Package | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Source-Down topology enables direct top-side cooling (vs Conventional TOLL-packaged MOSFETs)
- OptiMOS 5 trench technology reduces switching losses (vs Older OptiMOS 3/4 generations)
- 150 V rating provides optimal margin for 100 V continuous rails (vs 200 V-rated MOSFETs)
Design Notes
Estimated: With a Source-Down PG-TTFN-9-3 package, top-side copper cooling is the primary thermal path. The exposed source pad should be soldered to a copper pour of at least 1 square inch (645 mm^2) on the top layer, with an array of thermal vias (typically 0.3 mm drill, 0.5 mm pitch, filled with epoxy) connecting to inner copper planes. This configuration typically achieves a junction-to-ambient thermal resistance (theta_JA) below 35 C/W, allowing the 100 W Tc rating to be utilized in most practical applications without external heatsinks.
The Source-Down topology reverses the conventional TOLL/TDSON current path: drain current exits through the PCB bottom thermal pad while source current flows on the top copper layer. This arrangement minimizes the high-current loop area, reducing parasitic inductance that would otherwise cause voltage overshoot during switching. Design the gate-drive loop to be as short as possible and use a Kelvin-source connection (Sense pin) to prevent dynamic RDS(on) degradation caused by source-inductance-induced gate-voltage droop during high di/dt transitions.
Place the gate-driver IC within 5 mm of the gate pin to minimize gate-loop inductance. Use a 10 ohm gate-drive resistor (with optional parallel Schottky diode for asymmetric turn-on/off tuning) to control switching speed and limit ringing. Keep the power-loop (drain-source) copper pour as wide as practical - at least 10 mm for 44 A continuous operation - and avoid narrow bottlenecks that saturate current density. For high-frequency (>100 kHz) designs, add a small RC snubber (typically 1-10 ohm + 1-10 nF) across the drain-source to damp ringing without significantly increasing loss.
Do not exceed the datasheet's absolute maximum VDS of 150 V; in applications with significant parasitic inductance (long PCB traces, transformer leakage), add a transient voltage suppressor (TVS) or RC snubber to clamp inductive spikes. The Source-Down package requires special PCB footprint - do not reuse a standard TOLL/TDSON land pattern; refer to the Infineon footprint recommendation in the datasheet. Also note that the Sense pin must be connected to the Source pad with a separate trace - it cannot be directly bonded to the main source pad on the PCB.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified for automotive; for automotive-grade equivalents, look for Infineon parts with -Q1 suffix or automotive-qualified Source-Down MOSFETs. Halogen-free per JEDEC JS709 standard.
