IQEH54NE2LM7UCGATMA1 vs IQE018N06NM6CGATMA1 Comparison

Detailed side-by-side comparison of IQEH54NE2LM7UCGATMA1 by Infineon and IQE018N06NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQEH54NE2LM7UCGATMA1

IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon

IQEH54NE2LM7UCGATMA1 βœ“ Active
Infineon
IQE018N06NM6CGATMA1

IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 βœ“ Active

Specification Comparison

Parameter IQEH54NE2LM7UCGATMA1 IQE018N06NM6CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.95 $1.21
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor OptiMOS 6 60V
Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) 25 V β€”
Continuous Drain Current (ID) at Ta 52 A β€”
Continuous Drain Current (ID) at Tc 406 A β€”
Power Dissipation at Ta 2.5 W β€”
Power Dissipation at Tc 150 W β€”
Package PG-TTFN-9-3 PG-TTFN-9-3 (TOLL/TTFN)
Mounting Type Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
On-Resistance (RDS(on)) at 10V VGS [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical in nC] β€”
Operating Temperature Range -55C to +150C (typical MOSFET range) -55C to +175C (junction)
RoHS Status Compliant β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
Drain-Source Voltage (V_DS) β€” 60 V
Continuous Drain Current (I_D, Tc) β€” 178 A
Continuous Drain Current (I_D, Ta) β€” 25 A
R_DS(on) max (V_GS=10 V) β€” 1.8 mΞ©
Gate Threshold Voltage (V_GS(th)) β€” 3.3 V (logic-level compatible)
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 125 W
Technology β€” Trench MOSFET, OptiMOS 6
RoHS Compliance β€” Compliant

Datasheets & Resources

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