IQFH55N04NM6ATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IQFH55N04NM6ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQFH55N04NM6ATMA1
IQFH55N04NM6ATMA1 - 40V 451A 0.55mΞ© OptiMOS 6 MOSFET | Infineon
IQFH55N04NM6ATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IQFH55N04NM6ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.38 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D) @ TA=25Β°C | 53 A | β |
| Pulsed Drain Current @ TC=25Β°C | 451 A | β |
| Static R_DS(on) (typ) | 0.55 mΞ© | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 214 W | β |
| Package | PG-TSON-12-1 (PQFN 8x6 mmΒ², clip-based) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | β |
| Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55 C to +175 C |
| Technology | Trench MOSFET (OptiMOS 6 generation) | Trench MOSFET (OptiMOS 3) |
| RoHS Status | Compliant | β |
| AEC-Q100 | [DATA_NEEDED: automotive qualification status] | β |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |