IQFH55N04NM6ATMA1 vs BSC076N04NDATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQFH55N04NM6ATMA1 sa pamamagitan ng Infineon at BSC076N04NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQFH55N04NM6ATMA1 IQFH55N04NM6ATMA1 - 40V 451A 0.55mΩ OptiMOS 6 MOSFET | Infineon

IQFH55N04NM6ATMA1 - 40V 451A 0.55mΩ OptiMOS 6 MOSFET | Infineon

IQFH55N04NM6ATMA1 ✓ Nakahanda
Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQFH55N04NM6ATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) @ TA=25°C 53 A —
Pulsed Drain Current @ TC=25°C 451 A —
Static R_DS(on) (typ) 0.55 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 214 W —
Packhaging PG-TSON-12-1 (PQFN 8x6 mm², clip-based) —
Uri ng Pagpapasok Surface Mount Surface Mount
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
Gate Charge (Q_G) [DATA_NEEDED: total gate charge] —
Temperature ng Junction na Operasyon -55°C to +175°C -55 C to +175 C
Technology Trench MOSFET (OptiMOS 6 generation) Trench MOSFET (OptiMOS 3)
Tindminan RoHS Compliant —
AEC-Q100 [DATA_NEEDED: automotive qualification status] —
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Packhaging / Kaso — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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