IQFH55N04NM6ATMA1 - 40V 451A 0.55mΩ OptiMOS 6 MOSFET | Infineon
MPN: IQFH55N04NM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.45 | $24.50 |
| 100 | $1.95 | $195.00 |
| 500 | $1.62 | $810.00 |
| 1,000 | $1.38 | $1,380.00 |
IQFH55N04NM6ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used as the core building block of power management circuits. Within the broader taxonomy, this part belongs to: discrete semiconductor -> transistor -> MOSFET -> N-channel enhancement-mode power MOSFET -> low-voltage (<=100 V) power MOSFET -> synchronous rectifier / load switch. The IQFH55N04NM6ATMA1 belongs to Infineon's OptiMOS 6 family, which represents the 6th generation of Infineon's optimized trench MOSFET platform aimed at minimizing conduction and switching losses simultaneously.
Key features include a maximum static drain-source on-resistance that is among the lowest in this voltage class, an exceptionally compact clip-based PQFN 8x6 mm² package that exposes the top metal as a thermal interface, and qualified operation over -55°C to +175°C junction temperature. The device is targeted at high-current, high-efficiency switching applications where every milliohm of R_DS(on) translates into measurable conduction loss reduction.
From an architecture standpoint, the OptiMOS 6 cell shrinks the per-die channel pitch and improves gate charge / R_DS(on) figure-of-merit (FOM = Q_G × R_DS(on)) relative to the OptiMOS 5 generation. The clip-based PQFN construction replaces internal wire bonds with a copper clip on the source pad, simultaneously reducing source inductance, lowering parasitic resistance, and providing a low thermal-resistance path from die top to PCB top metal — all critical when the part is switching at high frequency with very high di/dt.
Typical applications include battery-powered cordless tools, e-bike and e-scooter motor drives, low-voltage DC-DC converter synchronous rectifiers, USB Power Delivery (PD) sink paths, telecom hot-swap controllers, and high-current load switches in industrial 24 V / 36 V bus systems. The wide safe operating area also suits it as a replacement for older TO-220 / D²KAK MOSFETs where board area is constrained.
When designing with this part, pay close attention to gate-drive voltage: OptiMOS 6 devices achieve their rated R_DS(on) only when driven by 10 V VGS. A 5 V logic-level drive is NOT sufficient and will leave the MOSFET partially enhanced with very high R_DS(on). Additionally, the clip-based PQFN requires substantial PCB top-side copper — preferably both inner and outer copper layers stitched with thermal vias — to realize the rated power dissipation.
This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, application-specific design notes, and parametric comparisons not found in the manufacturer datasheet alone — engineers evaluating a 40 V synchronous-rectifier MOSFET or a high-current load switch can use this single reference to make a sourcing and design decision.
Drop-in alternatives for IQFH55N04NM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQFH55N04NM6ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Power Dissipation (Tc), Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC045N03L5SATMA1
✅ Drop-In✓ In Stock
$0.51 / Unit
View Datasheet →IPC50N04S5L5R5ATMA1
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →BSC076N04NDATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IQEH50NE2LM7ZCGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.42 / Unit
View Datasheet →IQDH35N03LM5SCATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$2.05 / Unit
View Datasheet →IQFH55N04NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 6 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) @ TA=25°C | 53 A |
| Pulsed Drain Current @ TC=25°C | 451 A |
| Static R_DS(on) (typ) | 0.55 mΩ |
| Power Dissipation (TA) | 3 W |
| Power Dissipation (TC) | 214 W |
| Package | PG-TSON-12-1 (PQFN 8x6 mm², clip-based) |
| Mounting Type | Surface Mount |
| Operating Junction Temperature | -55°C to +175°C |
| Technology | Trench MOSFET (OptiMOS 6 generation) |
| RoHS Status | Compliant |
IQFH55N04NM6ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (also connected to exposed top pad) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate terminal — drive at V_GS=10 V for full enhancement |
| Pin 5 | Gate — Gate terminal (multi-pin for reduced gate-loop inductance) |
| Pin 6 | Gate — Gate terminal (multi-pin for reduced gate-loop inductance) |
| Pin 7 | Source — Source terminal |
| Pin 8 | Source — Source terminal |
| Pin 9 | Source — Source terminal |
| Pin 10 | Drain — Drain terminal — typically internally connected to bottom pad |
| Pin 11 | Drain — Drain terminal |
| Pin 12 | Drain — Drain terminal |
Safe Operating Area (DC, TC=25°C)
Typical Applications
IQFH55N04NM6ATMA1 is suitable for 6 applications: 12V Synchronous Rectifier in Buck Converters, Battery-Powered Cordless Tool Motor Drive, E-Bike and E-Scooter Battery Management, USB Power Delivery (PD) Sink Path, Industrial 24 V Hot-Swap Controller, Telecom 48 V Intermediate Bus Converter.
12V Synchronous Rectifier in Buck Converters
The IQFH55N04NM6ATMA1 is ideal as the low-side synchronous-rectifier MOSFET in 12 V-input buck and buck-boost DC-DC converters. Its 0.55 mΩ R_DS(on) at V_GS=10 V yields conduction losses below ~0.55 W at 10 A output current, while the OptiMOS 6 figure-of-merit keeps switching losses low at 300-500 kHz switching frequency. The 40 V V_DS provides ample headroom above the 12 V rail plus transient spikes, and the clip-based PQFN 8x6 source-inductance reduction limits overshoot during hard switching transitions.
Recommended
Battery-Powered Cordless Tool Motor Drive
The IQFH55N04NM6ATMA1 serves as the high-current switching element in 18-20 V cordless tool motor drives (drills, impact drivers, saws). Its 451 A pulsed current rating handles the inrush during motor startup and stall conditions, while the 0.55 mΩ R_DS(on) minimizes conduction loss under sustained running current of 20-40 A — directly extending battery runtime. The PQFN 8x6 clip package survives the high vibration and thermal-cycling environment of hand-held tools when properly land-patterned on FR-4 with thermal vias.
Recommended
E-Bike and E-Scooter Battery Management
In 24 V / 36 V / 48 V e-bike and e-scooter battery management systems, the IQFH55N04NM6ATMA1 is well suited as the protection-disconnect MOSFET and precharge path. Its 40 V V_DS comfortably covers 24 V packs (and is marginal above 36 V — derate carefully), while the 0.55 mΩ R_DS(on) keeps the I²R drop low during the 10-30 A continuous discharge of the drive motor. The PQFN 8x6 footprint integrates cleanly into the space-constrained BMS PCB.
Recommended
USB Power Delivery (PD) Sink Path
In USB-PD sink designs accepting 20 V / 5 A (100 W), the IQFH55N04NM6ATMA1 acts as the input-protection and reverse-current-blocking MOSFET. The 40 V V_DS handles 20 V input plus Type-C cable-transient ringing, and the 0.55 mΩ R_DS(on) yields only ~14 mV drop at 5 A — well within the USB-PD tolerance. The OptiMOS 6 low Q_G supports high-frequency switching in PD controllers without introducing excessive gate-drive losses.
Recommended
Industrial 24 V Hot-Swap Controller
The IQFH55N04NM6ATMA1 integrates as the main pass-element in 24 V industrial hot-swap and OR-ing FET applications. Its 451 A pulsed rating supports the inrush into large bulk capacitors on the load side, and the 0.55 mΩ R_DS(on) holds the steady-state dissipation manageable even at 30 A continuous. The PQFN 8x6 clip construction provides the low thermal-resistance path needed for sustained high-current operation in industrial enclosures.
Recommended
Telecom 48 V Intermediate Bus Converter
In telecom and server intermediate-bus architectures operating from a 48 V backplane, the IQFH55N04NM6ATMA1 is used in 48 V to 12 V LLC or full-bridge converters as a primary-side switch. Its 40 V V_DS is NOT sufficient for the full 48 V rail (use a 100 V part instead), but it serves the 12 V secondary-side synchronous-rectifier role with excellent efficiency thanks to its 0.55 mΩ R_DS(on) and low Q_G.
Recommended
Recommended Products Summary
Engineering reference data for IQFH55N04NM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC045N03L5SATMA1 | IPC50N04S5L5R5ATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSON-12-1 (PQFN 8x6 mm²) | PG-TSDSON-8 (5x6 mm²) | PG-TSDSON-8 (5x6 mm²) | PG-TDSON-8 (SuperSO8, 5x6 mm²) |
| Drain-Source Voltage (V_DS) | 40 V | 30 V | 40 V | 40 V |
| Static R_DS(on) (typ @ V_GS=10V) | 0.55 mΩ | 0.45 mΩ | 5.5 mΩ | 0.76 mΩ |
| Technology Generation | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Operating Junction Temperature | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C |
| RoHS Status | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Lowest R_DS(on) in Infineon's 40 V OptiMOS 6 PQFN 8x6 family (vs BSC076N04NDATMA1)
- Clip-based PQFN 8x6 mm² with exposed top metal for direct PCB thermal coupling (vs ISC045N03L5SATMA1)
- OptiMOS 6 cell technology offers best-in-class FOM (Q_G × R_DS(on)) (vs IPC50N04S5L5R5ATMA1)
- 451 A pulsed current rating supports motor-startup and inrush events (vs IQDH35N03LM5SCATMA1)
Design Notes
Estimated: at continuous I_D = 30 A with R_DS(on) = 0.55 mΩ, conduction loss is I²R = 30² × 0.00055 = 0.495 W — easily handled by the PQFN 8x6 with a 4-layer PCB and ≥10 thermal vias under the exposed pad. At 50 A continuous, conduction loss rises to ~1.4 W; verify θ_JA on your specific board layout (typically 35-50 °C/W with proper copper stitching). For applications near the 451 A pulsed limit, ensure pulse duration stays below the thermal-time-constant of the package to avoid silicon-junction overheating.
The PG-TSON-12-1 (PQFN 8x6 mm²) clip-based package MUST be land-patterned to expose the top clip pad to the PCB. Solder the clip pad directly to the top copper pour with multiple thermal vias (≥12, 0.3 mm drill, 1 mm pitch) connecting to all internal copper layers. Place the gate driver within 5 mm of pins 4-6 to minimize gate-loop inductance — at di/dt > 5 A/ns this parasitic can cause severe ringing and unintended turn-on. Use a 10 Ω gate-source resistor to suppress Miller-induced turn-on during switching transients.
Do NOT attempt to drive this part with 3.3 V or 5 V logic. OptiMOS 6 requires V_GS = 10 V (typical) to achieve the datasheet R_DS(on) of 0.55 mΩ; at V_GS = 4.5 V the part is only partially enhanced and effective R_DS(on) can be 5-10× higher. Also avoid exceeding the absolute maximum V_GS of ±20 V — gate-oxide stress can cause parametric shift. For high-frequency switching (>500 kHz) at high current, double-check SOA: the 40 V / 451 A pulsed rating is for very short pulses only.
Keep the source-return loop area as small as possible: route the gate-driver ground return directly to the source pads (pins 1-3 / 7-9) using a Kelvin connection on the PCB — NOT through the power-ground copper pour. This Kelvin-source connection eliminates the source-inductance voltage drop from interfering with the gate-drive signal. For multi-MOSFET paralleling, gate-source resistors (10-100 Ω) on each device prevent oscillation between paralleled MOSFETs.
Compliance Information
RoHS and REACH compliance per Infineon product page. AEC-Q100 automotive qualification not confirmed in the Verified Web Data provided — for automotive applications, verify qualification status against the latest Infineon automotive product catalog.
