IRF1010EPBF vs IRFB4110PBF Comparison
Detailed side-by-side comparison of IRF1010EPBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1010EPBF | IRFB4110PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.45 | $1.55 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) | 84 A at Tc | — |
| Power Dissipation (PD) | 200 W at Tc | — |
| On-Resistance (RDS(on)) | 12 mOhm | — |
| Total Gate Charge (Qg) | 86.6 nC | — |
| Technology | HEXFET Power MOSFET | HEXFET (planar DMOS) |
| Package | TO-220AB | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Configuration | Single FET | — |
| RoHS Status | RoHS3 Compliant | Compliant (Pb-free suffix) |
| MSL Level | 3 (168 Hours) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Rise Time / Fall Time | [DATA_NEEDED: switching times] | — |
| Thermal Resistance (RthJC) | [DATA_NEEDED: thermal resistance junction to case] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| Operating Junction Temperature | — | -55 °C to +175 °C |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |