IRF1010ESTRLPBF vs IRF1010ZSTRLPBF Comparison

Detailed side-by-side comparison of IRF1010ESTRLPBF by Infineon and IRF1010ZSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF1010ESTRLPBF IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF ✓ Active

Specification Comparison

Parameter IRF1010ESTRLPBF IRF1010ZSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $0.00
FET Type N-Channel —
Technology HEXFET planar HEXFET Advanced Process Technology
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) @ Tc 84 A —
Power Dissipation (Pd) @ Tc 200 W —
On-Resistance (RDS on) @ VGS=10V 12 mOhm —
Total Gate Charge (Qg) 86.6 nC 63 nC
Operating Mode Enhancement Enhancement
Drive Voltage 10 V (standard level) —
Mounting Type Surface Mount Surface Mount
Package D2PAK (TO-263) D2PAK (TO-263), Surface Mount
Qualification JEDEC standard qualified —
Structure Planar cell (wide SOA) —
Avalanche Testing 100% avalanche energy tested —
Sourcing Multi-vendor, broad distribution availability —
Pb-Free / RoHS PBF (Pb-free) suffix —
Polarity — N-Channel
Drain-Source Breakdown Voltage (V(BR)DSS) — 55 V
Continuous Drain Current (Id) — 75 A at Tc
Continuous Drain Current (Id, distributor listing) — 94 A
Drain-Source On-Resistance (RDS(on)) — 7.5 mOhm
RDS(on) (alternate condition) — 14.0 mOhm
Power Dissipation (Pd) — 140 W at Tc
Junction Operating Temperature — 175 C (max)
Avalanche Rating — Improved repetitive avalanche rating
Gate-Source Voltage (Vgs) — [DATA_NEEDED: gate-source voltage]
RoHS Status — RoHS3 Compliant (PBF lead-free suffix)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: gate threshold voltage]

Datasheets & Resources

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