IRF1010ESTRLPBF vs IRF1010ZSTRLPBF 比較
詳細な並列比較: IRF1010ESTRLPBF メーカー: Infineon および IRF1010ZSTRLPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF1010ESTRLPBF | IRF1010ZSTRLPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $0.00 |
| FET Type | N-Channel | — |
| Technology | HEXFET planar | HEXFET Advanced Process Technology |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ Tc | 84 A | — |
| Power Dissipation (Pd) @ Tc | 200 W | — |
| On-Resistance (RDS on) @ VGS=10V | 12 mOhm | — |
| Total Gate Charge (Qg) | 86.6 nC | 63 nC |
| Operating Mode | Enhancement | Enhancement |
| Drive Voltage | 10 V (standard level) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| パッケージ | D2PAK (TO-263) | D2PAK (TO-263), Surface Mount |
| Qualification | JEDEC standard qualified | — |
| Structure | Planar cell (wide SOA) | — |
| Avalanche Testing | 100% avalanche energy tested | — |
| Sourcing | Multi-vendor, broad distribution availability | — |
| Pb-Free / RoHS | PBF (Pb-free) suffix | — |
| Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 55 V |
| Continuous Drain Current (Id) | — | 75 A at Tc |
| Continuous Drain Current (Id, distributor listing) | — | 94 A |
| Drain-Source On-Resistance (RDS(on)) | — | 7.5 mOhm |
| RDS(on) (alternate condition) | — | 14.0 mOhm |
| Power Dissipation (Pd) | — | 140 W at Tc |
| Junction Operating Temperature | — | 175 C (max) |
| Avalanche Rating | — | Improved repetitive avalanche rating |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: gate-source voltage] |
| RoHS ステータス | — | RoHS3 Compliant (PBF lead-free suffix) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |