IRF1010ESTRLPBF vs IRF1010ZSTRLPBF Сравнение
Подробное сравнение бок о бок IRF1010ESTRLPBF от Infineon и IRF1010ZSTRLPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRF1010ESTRLPBF | IRF1010ZSTRLPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,00 | $0,00 |
| FET Type | N-Channel | — |
| Technology | HEXFET planar | HEXFET Advanced Process Technology |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ Tc | 84 A | — |
| Power Dissipation (Pd) @ Tc | 200 W | — |
| On-Resistance (RDS on) @ VGS=10V | 12 mOhm | — |
| Total Gate Charge (Qg) | 86.6 nC | 63 nC |
| Operating Mode | Enhancement | Enhancement |
| Drive Voltage | 10 V (standard level) | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Корпус | D2PAK (TO-263) | D2PAK (TO-263), Surface Mount |
| Qualification | JEDEC standard qualified | — |
| Structure | Planar cell (wide SOA) | — |
| Avalanche Testing | 100% avalanche energy tested | — |
| Sourcing | Multi-vendor, broad distribution availability | — |
| Pb-Free / RoHS | PBF (Pb-free) suffix | — |
| Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 55 V |
| Continuous Drain Current (Id) | — | 75 A at Tc |
| Continuous Drain Current (Id, distributor listing) | — | 94 A |
| Drain-Source On-Resistance (RDS(on)) | — | 7.5 mOhm |
| RDS(on) (alternate condition) | — | 14.0 mOhm |
| Power Dissipation (Pd) | — | 140 W at Tc |
| Junction Operating Temperature | — | 175 C (max) |
| Avalanche Rating | — | Improved repetitive avalanche rating |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: gate-source voltage] |
| Статус RoHS | — | RoHS3 Compliant (PBF lead-free suffix) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |