IRF1010ZPBF vs IRF2907ZSTRLPBF Comparison

Detailed side-by-side comparison of IRF1010ZPBF by Infineon and IRF2907ZSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF1010ZPBF IRF2907ZSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.36 $1.55
Polarity N-Channel —
Drain-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) at Tc 75 A (Tc=25C) —
Power Dissipation (Pd) at Tc 140 W (Tc=25C) —
On-Resistance (Rds on) Max [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) —
Total Gate Charge (Qg) 63 nC (typ, per Mouser listing) —
MOSFET Operating Mode Enhancement —
Package TO-220AB (3-pin + tab), Through Hole D2PAK (TO-263AB) surface mount
Configuration Single MOSFET —
Maximum Junction Temperature 175 C —
Mounting Type Through Hole Surface Mount (SMD)
Qualification JEDEC industry standard qualification —
Avalanche Rating Improved repetitive avalanche rated Repetitive avalanche allowed up to TJ(max)
RoHS Status Compliant (PBF = Pb-free) Compliant
Lead Status Lead Free —
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: gate threshold voltage range] —
Transistor Polarity — N-Channel
Drain-Source Voltage V(BR)DSS — 75 V
Continuous Drain Current (TC=25°C) — 170 A
Continuous Drain Current (TC=100°C) — [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS = 10 V — 4.5 mOhm
RDS(on) typical at VGS = 10 V — 3.5 mOhm
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V
Maximum Power Dissipation (TC = 25 C) — 300 W
Operating Junction Temperature — -55 C to +175 C
Technology — IR HEXFET / IR MOSFET
Pin Count — 3 (Gate, Drain, Source)
Packaging — Tape and Reel (left orientation)
Lead-Free — Yes (PBF suffix)

Datasheets & Resources

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