IRF1010ZPBF vs IRF2907ZSTRLPBF Comparación
Comparación detallada lado a lado de IRF1010ZPBF por Infineon y IRF2907ZSTRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF1010ZPBF | IRF2907ZSTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,36 | $1,55 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc | 75 A (Tc=25C) | — |
| Power Dissipation (Pd) at Tc | 140 W (Tc=25C) | — |
| On-Resistance (Rds on) Max | [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) | — |
| Total Gate Charge (Qg) | 63 nC (typ, per Mouser listing) | — |
| MOSFET Operating Mode | Enhancement | — |
| Encapsulado | TO-220AB (3-pin + tab), Through Hole | D2PAK (TO-263AB) surface mount |
| Configuration | Single MOSFET | — |
| Maximum Junction Temperature | 175 C | — |
| Tipo de montaje | Through Hole | Surface Mount (SMD) |
| Qualification | JEDEC industry standard qualification | — |
| Avalanche Rating | Improved repetitive avalanche rated | Repetitive avalanche allowed up to TJ(max) |
| Estado RoHS | Compliant (PBF = Pb-free) | Compliant |
| Lead Status | Lead Free | — |
| Gate Threshold Voltage (Vgs th) | [DATA_NEEDED: gate threshold voltage range] | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage V(BR)DSS | — | 75 V |
| Corriente de drenador continua (TC=25°C) | — | 170 A |
| Corriente de drenador continua (TC=100°C) | — | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS = 10 V | — | 4.5 mOhm |
| RDS(on) typical at VGS = 10 V | — | 3.5 mOhm |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 4.0 V |
| Maximum Power Dissipation (TC = 25 C) | — | 300 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Technology | — | IR HEXFET / IR MOSFET |
| Recuento de pines | — | 3 (Gate, Drain, Source) |
| Packaging | — | Tape and Reel (left orientation) |
| Lead-Free | — | Yes (PBF suffix) |