IRF2907ZSTRLPBF - 75V 170A N-Ch HEXFET MOSFET D2PAK | Infineon
MPN: IRF2907ZSTRLPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.65 | $26.50 |
| 100 | $2.2 | $220.00 |
| 500 | $1.85 | $925.00 |
| 1,000 | $1.55 | $1,550.00 |
Drop-in alternatives for IRF2907ZSTRLPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IRF2907ZSPBF
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View Datasheet βIRFR4615TRLPBF
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View Datasheet βIRF2907ZSTRLPBF Maximum Ratings & Electrical Characteristics
| Transistor Polarity | N-Channel |
| Drain-Source Voltage V(BR)DSS | 75 V |
| Continuous Drain Current (TC = 25 C) | 170 A |
| RDS(on) max at VGS = 10 V | 4.5 mOhm |
| RDS(on) typical at VGS = 10 V | 3.5 mOhm |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V |
| Maximum Power Dissipation (TC = 25 C) | 300 W |
| Operating Junction Temperature | -55 C to +175 C |
| Technology | IR HEXFET / IR MOSFET |
| Package | D2PAK (TO-263AB) surface mount |
| Pin Count | 3 (Gate, Drain, Source) |
| Mounting Type | Surface Mount (SMD) |
| Packaging | Tape and Reel (left orientation) |
| Lead-Free | Yes (PBF suffix) |
| RoHS Status | Compliant |
| Avalanche Rating | Repetitive avalanche allowed up to TJ(max) |
IRF2907ZSTRLPBF Pin Configuration
| Pin 1 | Gate β Gate control input; voltage-driven (typically 10 V) |
| Pin 2 | Drain β Drain terminal; internally connected to metal tab |
| Pin 3 | Source β Source terminal; power return |
| Pin TAB | Drain (Tab) β Metal tab on bottom of package - electrically Drain, also thermal pad |
Safe Operating Area (DC)
Typical Applications
IRF2907ZSTRLPBF is suitable for 7 applications: 24V Automotive Motor Drive, Synchronous Rectifier Low-Side Switch, Battery Protection and Hot-Swap, Solenoid and Relay Driver, Uninterruptible Power Supply (UPS) Inverter, Welding Inverter Half-Bridge, Audio Amplifier Output Stage.
24V Automotive Motor Drive
The IRF2907ZSTRLPBF is an excellent low-side switch for 24 V brushed DC motor drives in body controllers, electric power steering pumps, HVAC blower motors, and seat adjusters. Its 75 V V(BR)DSS provides 3x transient headroom over a 24 V load-dump spike (typically up to 35 V on 24 V systems), while 170 A silicon-limited current handles inrush currents from stalled rotors. The 4.5 mOhm RDS(on) keeps conduction loss low - at 30 A continuous drain current dissipation is only 4 W, well within the D2PAK thermal envelope with 2 oz copper PCB. Designers pair this MOSFET with a dedicated gate driver (1-2 A peak) to achieve switching frequencies above 20 kHz for silent PWM operation.
Recommended
Synchronous Rectifier Low-Side Switch
In 24 V to 48 V buck converters and synchronous-rectifier forward converters, the IRF2907ZSTRLPBF is used as the low-side switch where its ultra-low 4.5 mOhm RDS(on) dramatically reduces conduction loss compared to Schottky rectifiers. At 50 A load the MOSFET dissipates 11.25 W versus 25 W for an equivalent Schottky, raising overall converter efficiency by 3-5%. The fast switching speed (50-100 ns tr/tf) supports 100 kHz+ switching frequencies. The exposed D2PAK tab solders directly to the PCB copper heat-spreader, removing the need for an external heatsink in chassis-mount designs. This topology is common in 48 V mild-hybrid DC-DC converters and telecom brick converters.
Recommended
Battery Protection and Hot-Swap
The IRF2907ZSTRLPBF serves as the main disconnect MOSFET in 12 V/24 V lead-acid and Li-ion battery packs, where its 75 V rating handles full battery voltage plus inductive transient spikes during hot-plug events. The 170 A continuous current rating matches the discharge current of large e-scooter, e-bike, and 48 V mild-hybrid battery packs. The repetitive avalanche rating up to TJ(max) provides inherent protection during reverse-battery or load-dump events. The D2PAK surface-mount package enables automated assembly in high-volume pack production. Designers add a TVS diode across drain-source and a gate-source resistor of 10-100 kOhm to prevent parasitic turn-on.
Recommended
Solenoid and Relay Driver
Industrial solenoid valves, pneumatic relays, and large contactor coils demand peak currents of 50-100 A during pull-in before settling to a lower hold current. The IRF2907ZSTRLPBF handles the peak inrush easily with its 170 A rating, while the 4.5 mOhm RDS(on) keeps the saturated switch voltage drop below 0.5 V at 100 A - minimizing coil driver dissipation. PWM at 10-25 kHz can be applied for proportional solenoid control. The repetitive avalanche rating protects the MOSFET when the solenoid inductance forces current to continue flowing at turn-off, allowing direct connection without external freewheeling diodes in many cases. This topology appears in factory automation, CNC machines, and process control valve banks.
Recommended
Uninterruptible Power Supply (UPS) Inverter
Online UPS systems in the 1-10 kVA range use the IRF2907ZSTRLPBF as the low-side switch in 24 V or 48 V battery-to-AC inverter half-bridges. The 75 V rating provides ample margin over 48 V battery stacks including equalization voltage transients, while the 170 A current rating covers 3-5 kW inverter outputs. Synchronous-rectifier topology using these MOSFETs reaches 96%+ efficiency, far exceeding diode-rectified designs. The 300 W power dissipation rating at TC = 25 C with proper PCB copper allows fan-less operation in many designs. The exposed D2PAK tab enables direct thermal coupling to aluminum chassis plates in industrial UPS enclosures.
Recommended
Welding Inverter Half-Bridge
Small inverter welders in the 100-200 A output class use the IRF2907ZSTRLPBF as the primary switching element in a 48 V to 80 V push-pull or full-bridge topology. The repetitive avalanche rating up to TJ(max) = 175 C is critical for welding inverters, where the transformer leakage inductance forces the MOSFET to absorb energy during turn-off - this part is rated to handle that stress continuously. The 4.5 mOhm RDS(on) limits conduction loss at the 100-150 A primary currents typical of small welders. The D2PAK package handles the pulsed power dissipation within its thermal mass when mounted on a 4-layer PCB with generous copper pours.
Recommended
Audio Amplifier Output Stage
High-power class-D audio amplifiers in the 500 W to 2 kW range use the IRF2907ZSTRLPBF as the low-side switch in the output half-bridge. Its 4.5 mOhm RDS(on) keeps output-stage conduction loss below 1% at full power, preserving amplifier efficiency above 95%. The fast switching edge (under 50 ns rise/fall) enables 400 kHz+ PWM carrier frequencies, which push the LC filter crossover above the audible band. Total harmonic distortion plus noise (THD+N) below 0.01% is achievable. The 75 V V(BR)DSS is comfortable for +/- 35 V audio rails. The exposed tab is soldered to a substantial copper pour that doubles as the amplifier chassis thermal interface.
Recommended
Recommended Products Summary
Engineering reference data for IRF2907ZSTRLPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF2907ZSPBF | IRFB3077PBF | IRFB3207PBF | IRFB4110PBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | D2PAK (TO-263AB) | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same |
| Drain-Source Voltage V(BR)DSS | 75 V | 75 V | 75 V | 75 V | 100 V |
| Continuous Drain Current (TC=25C) | 170 A | 170 A | 210 A | 180 A | 180 A |
| RDS(on) max at VGS=10V | 4.5 mOhm | 4.5 mOhm | 3.3 mOhm | 4.5 mOhm | 4.5 mOhm |
| Maximum Power Dissipation | 300 W | 300 W | 370 W | 330 W | 370 W |
| Operating Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
| Lead-Free / RoHS | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes (PBF) |
Key Differentiators
- Ultra-low RDS(on) per silicon area (vs IRF9540NPBF (P-channel))
- 170A continuous current vs lower-rated alternatives (vs IRFR4615TRLPBF (DPAK))
- 175C maximum junction temperature (vs Standard 150C-rated MOSFETs)
Design Notes
Estimated: at 100 A continuous drain current and 4.5 mOhm RDS(on), conduction loss is 45 W. The D2PAK package has a junction-to-ambient thermal resistance of approximately 40 C/W on a 1 oz 1-square-inch copper pad, resulting in a junction temperature rise of 1800 C above ambient - far above the 175 C rating. Either increase copper area to 4+ square inches (reducing theta_JA to ~20 C/W) or use forced-air cooling. The drain tab MUST be soldered to the PCB for both electrical and thermal connection; thermal vias under the tab reduce junction-to-ambient resistance by 30-50%.
Place the gate-drive resistor (typically 10-100 Ohm) within 5 mm of the gate pin to suppress parasitic oscillation from the gate-source capacitance and PCB trace inductance. Use a kelvin-source connection for high-frequency switching: separate the power source path from the gate-drive source path with a small SMD resistor (1-10 Ohm) to decouple the source inductance. Keep the high-current drain loop area minimal by placing input capacitors close to the drain tab. A gate-source resistor of 10 kOhm from gate to source prevents false turn-on from dv/dt-induced Miller current during drain-voltage transitions.
Do not exceed VGS = +/-20 V - the gate oxide is rated for 20 V absolute maximum and 10 V nominal. Static-sensitive device: handle with proper ESD precautions. Do not operate in linear mode for sustained periods: the SOA curve shows DC operation is limited to ~4.5 A at 75 V VDS, so for switching applications ensure fast transitions through the linear region. For avalanche-rated designs, observe the repetitive avalanche energy (EAS) limit in the datasheet and add a TVS clamp if the application's stored energy exceeds the rating.
Compliance Information
RoHS compliant and lead-free per Infineon datasheet. Standard industrial grade - for AEC-Q101 automotive qualification, request the AUIRF2907Z variant.
