IRF1010ZPBF vs IRF2907ZSTRLPBF Vergleich

Detaillierter Direktvergleich von IRF1010ZPBF von Infineon und IRF2907ZSTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF1010ZPBF IRF2907ZSTRLPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,36 $1,55
Polarity N-Channel —
Drain-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) at Tc 75 A (Tc=25C) —
Power Dissipation (Pd) at Tc 140 W (Tc=25C) —
On-Resistance (Rds on) Max [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) —
Total Gate Charge (Qg) 63 nC (typ, per Mouser listing) —
MOSFET Operating Mode Enhancement —
Gehäuse TO-220AB (3-pin + tab), Through Hole D2PAK (TO-263AB) surface mount
Configuration Single MOSFET —
Maximum Junction Temperature 175 C —
Montageart Through Hole Surface Mount (SMD)
Qualification JEDEC industry standard qualification —
Avalanche Rating Improved repetitive avalanche rated Repetitive avalanche allowed up to TJ(max)
RoHS-Status Compliant (PBF = Pb-free) Compliant
Lead Status Lead Free —
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: gate threshold voltage range] —
Transistor Polarity — N-Channel
Drain-Source Voltage V(BR)DSS — 75 V
Kontinuierlicher Drain-Strom (TC=25°C) — 170 A
Kontinuierlicher Drain-Strom (TC=100°C) — [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS = 10 V — 4.5 mOhm
RDS(on) typical at VGS = 10 V — 3.5 mOhm
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V
Maximum Power Dissipation (TC = 25 C) — 300 W
Betriebs-Sperrschichttemperatur — -55 C to +175 C
Technology — IR HEXFET / IR MOSFET
Pin-Anzahl — 3 (Gate, Drain, Source)
Packaging — Tape and Reel (left orientation)
Lead-Free — Yes (PBF suffix)

Datenblätter & Ressourcen

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