IRF1310NPBF vs IRF1310NSTRLPBF Comparison
Detailed side-by-side comparison of IRF1310NPBF by Infineon and IRF1310NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1310NPBF | IRF1310NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.84 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | 42 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | Β±20 V | [DATA_NEEDED: VGS max rating] |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 36 mOhm | β |
| Total Gate Charge (Qg) | 73.3 nC | 73.3 nC |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs value] | β |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd value] | β |
| Power Dissipation (PD) at TC=25C | 160 W | 160 W |
| Maximum Junction Temperature | 175 C | β |
| Operating Temperature Range | -55 C to +175 C | -55C to +175C |
| Package | TO-220AB (through-hole) | D2PAK (TO-263AB) |
| Mounting Type | Through Hole | Surface Mount |
| Technology | HEXFET | IR MOSFET (HEXFET) |
| RoHS Status | Compliant (PBF suffix) | β |
| Transistor Type | β | N-Channel MOSFET |
| On-Resistance RDS(on) max at VGS=10V | β | 36 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Built-in Diode | β | Yes (intrinsic body diode) |
| Lead-Free / RoHS | β | Yes (PBF suffix) |
| Configuration | β | Single with built-in diode |