IRF1310NPBF vs IRF1310NSTRLPBF Perbandingan
Perbandingan bersamaan detil IRF1310NPBF dari Infineon dan IRF1310NSTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF1310NPBF | IRF1310NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | 42 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max rating] |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 36 mOhm | — |
| Total Gate Charge (Qg) | 73.3 nC | 73.3 nC |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs value] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd value] | — |
| Power Dissipation (PD) at TC=25C | 160 W | 160 W |
| Maximum Junction Temperature | 175 C | — |
| Rentang Suhu Kerja | -55 C to +175 C | -55C to +175C |
| Paket | TO-220AB (through-hole) | D2PAK (TO-263AB) |
| Tipe Mounting | Through Hole | Surface Mount |
| Technology | HEXFET | IR MOSFET (HEXFET) |
| Status RoHS | Compliant (PBF suffix) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Built-in Diode | — | Yes (intrinsic body diode) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Configuration | — | Single with built-in diode |