IRF1310NPBF vs IRF1310NSTRLPBF 比較
詳細並排比較 IRF1310NPBF 由 Infineon 與 IRF1310NSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF1310NPBF | IRF1310NSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | 42 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max rating] |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 36 mOhm | — |
| Total Gate Charge (Qg) | 73.3 nC | 73.3 nC |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs value] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd value] | — |
| Power Dissipation (PD) at TC=25C | 160 W | 160 W |
| Maximum Junction Temperature | 175 C | — |
| 工作溫度範圍 | -55 C to +175 C | -55C to +175C |
| 封裝 | TO-220AB (through-hole) | D2PAK (TO-263AB) |
| 安裝類型 | Through Hole | Surface Mount |
| Technology | HEXFET | IR MOSFET (HEXFET) |
| RoHS 狀態 | Compliant (PBF suffix) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Built-in Diode | — | Yes (intrinsic body diode) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Configuration | — | Single with built-in diode |