IRFP2907PBF - 75V 209A N-Channel HEXFET MOSFET | Infineon
MPN: IRFP2907PBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.78 | $37.80 |
| 100 | $3.2 | $320.00 |
| 500 | $2.78 | $1,390.00 |
| 1,000 | $2.45 | $2,450.00 |
Drop-in alternatives for IRFP2907PBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFP4368PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFP4468PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFB4110PBF
β Drop-Inβ In Stock
$1.55 / Unit
View Datasheet βIRF3205PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFP250MPBF
β Drop-Inβ In Stock
$2.55 / Unit
View Datasheet βIRFP2907PBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRFP2907PBF |
| Technology | HEXFET Stripe Planar DMOS (N-Channel) |
| Drain-to-Source Voltage (V_DSS) | 75 V |
| Continuous Drain Current (I_D) at T_C = 25 C | 209 A |
| Static Drain-to-Source On-Resistance (R_DS(on)) | 4.5 mOhm at V_GS = 10 V |
| Power Dissipation (P_D) at T_C = 25 C | 470 W |
| Total Gate Charge (Q_g) | 410 nC |
| Maximum Junction Operating Temperature | +175 C |
| Package / Mounting Type | TO-247AC (Through Hole) |
| Pin Count | 3 (Gate, Drain, Source) |
| RoHS Compliance | Yes (Pb-free) |
| Avalanche Rated | Yes (repetitive avalanche rated) |
| Body Diode | Integral (no external anti-parallel diode required) |
| Lead-Free | Yes |
IRFP2907PBF Pin Configuration
| Pin 1 | Gate β Gate control input; drive to 10 V for full enhancement |
| Pin 2 | Drain β Drain terminal; electrically tied to the metal tab and mounting hole |
| Pin 3 | Source β Source terminal; return path for gate drive and load |
IRFP2907PBF Safe Operating Area (DC, T_C = 25 C)
Typical Applications
IRFP2907PBF is suitable for 6 applications: 12 V/24 V Automotive Battery Protection, Brushed and BLDC Motor Drives, High-Current Synchronous Rectification, Class-D Audio Amplifier Output Stage, Solar Charge Controller / MPPT Front End, Welding Inverter Front End.
12 V/24 V Automotive Battery Protection
The IRFP2907PBF's 75 V V_DSS and 209 A continuous drain current make it ideal for high-current battery isolation and reverse-polarity protection circuits in 12 V and 24 V automotive systems. Its 4.5 mOhm R_DS(on) at 10 V V_GS keeps conduction loss under 1 W at 15 A load, minimizing heat on the isolation MOSFET. The 175 C junction rating tolerates load-dump transients on the alternator bus when sized with a TVS clamp. Placed in line with the battery positive rail, controlled by a smart high-side driver, it disconnects the load on over-current or reverse polarity within microseconds.
Recommended
Brushed and BLDC Motor Drives
For industrial brushed DC and brushless DC motor drives up to about 5 kW, the IRFP2907PBF delivers the continuous current needed for peak torque demands. Its 4.5 mOhm R_DS(on) and 410 nC gate charge support PWM frequencies of 15-25 kHz with acceptable switching loss, while the HEXFET avalanche rating handles the inductive kickback from motor windings. In a three-phase bridge each phase pair carries RMS currents of 40-60 A during normal operation, well within the 209 A capability. Designers should still add an RC snubber or gate-drive clamp to manage dV/dt-induced ringing at high current.
Recommended
High-Current Synchronous Rectification
The IRFP2907PBF works well as the synchronous rectifier MOSFET in 12 V-input, 50-100 A output buck converters for telecom and server DC-DC bricks. At 50 A load the conduction loss is roughly 11 W (I^2 x R_DS(on)), which a TO-247AC heatsink dissipates easily within the 470 W rated dissipation. The 75 V V_DSS provides ample margin over a 12 V nominal input. Using a dedicated low-side gate driver such as the IRS2109STRPBF in the XAIPART catalog ensures clean 10 V gate drive, which is essential to realize the published 4.5 mOhm R_DS(on).
Recommended
Class-D Audio Amplifier Output Stage
In high-wattage class-D audio amplifiers (1 kW and up), the IRFP2907PBF serves as the half-bridge output switch. Its 4.5 mOhm R_DS(on) minimizes conduction loss and keeps output impedance low, preserving damping factor and bass response. The 410 nC gate charge enables 250-500 kHz switching frequencies needed for high-fidelity audio while keeping driver loss manageable. Two IRFP2907PBF devices per channel (totem-pole) handle continuous currents typical of 4 ohm subwoofer loads. Engineers should add gate-source resistors and local bypass to prevent parasitic oscillation.
Recommended
Solar Charge Controller / MPPT Front End
The IRFP2907PBF's 75 V V_DSS accommodates solar panel open-circuit voltages up to about 50 V in 24 V nominal systems, and its 209 A continuous current supports charge currents of 80-120 A through a heat-spreader. Used as the main switching element in a buck-type MPPT controller, its 4.5 mOhm R_DS(on) maintains efficiency above 96 percent at 60 A load. The 175 C junction temperature allows high-power operation in outdoor enclosures with limited active cooling. A heatsink with thermal pad to chassis is recommended for sustained full-sun operation.
Recommended
Welding Inverter Front End
The IRFP2907PBF is widely used as the primary-side switch in low-voltage (24 V/48 V) inverter welders and plasma cutters. Its 209 A rating easily handles the burst currents of 100-150 A during welding arcs, while the HEXFET avalanche rating absorbs the energy of load transients. Two IRFP2907PBF devices in parallel share the load, each dissipating roughly 30-50 W during steady welding. The TO-247AC package bolts directly to an aluminum heatsink, simplifying mechanical integration into the rugged enclosure. Designers should use a 10-47 ohm gate resistor to suppress ringing during the arc strike.
Recommended
Recommended Products Summary
Engineering reference data for IRFP2907PBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFP4368PBF | IRFP4468PBF | IRFB4110PBF | IRF3205PBF | IRFP250MPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-247AC | TO-247AC - same | TO-247AC - same | TO-247AC - same | TO-247AC - same | TO-247AC - same |
| V_DSS (V) | 75 | 75 | 100 | 100 | 55 | 200 |
| Continuous I_D at 25 C (A) | 209 | 350 | 195 | 180 | 110 | 75 |
| R_DS(on) at 10 V (mOhm) | 4.5 | 3.3 | 8.7 | 4.5 | 8.0 | 12 |
| Gate Charge Q_g (nC) | 410 | 520 | 380 | 370 | 146 | 180 |
| Power Dissipation P_D (W) | 470 | 520 | 520 | 370 | 200 | 214 |
| Maximum Junction Temperature (C) | +175 | +175 | +175 | +175 | +175 | +175 |
| Approx. Unit Price @ 100 pcs (USD) | 3.20 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Industry-leading R_DS(on) of 4.5 mOhm in 75 V TO-247AC class (vs IRF3205PBF)
- Higher continuous current (209 A) at same V_DSS than legacy IRF3205 (vs IRF3205PBF)
- Higher current headroom with same TO-247AC footprint (vs IRFP4368PBF)
Design Notes
Estimated: at I_D = 50 A continuous and R_DS(on) = 4.5 mOhm, conduction loss is I^2 x R = 11.25 W. With TO-247AC junction-to-case thermal resistance of about 0.31 C/W (estimated from typical Infineon data), the junction rises roughly 3.5 C above case. If the case-to-sink interface uses a thermal pad (0.5 C/W) plus a 4 C/W heatsink, total rise from ambient is around 50 C, leaving comfortable margin to the 175 C junction limit. Always verify with the actual mounted thermal resistance in your assembly.
Keep the gate-drive loop as small as possible to minimize parasitic inductance. Place the gate-drive resistor (10-47 ohm) directly at the gate pin, and route the gate return to the source pin rather than to a distant ground. For switching frequencies above 50 kHz, add a 10 kohm gate-source pull-down resistor to ensure the FET stays off when the driver is tri-stated during power-up.
The TO-247AC mounting tab is electrically connected to the drain pin (pin 2). Mount the tab directly to the heatsink using a thermally conductive but electrically insulating pad (such as Bergquist Sil-Pad) if the heatsink is grounded, or use a plain thermal pad if the heatsink floats at drain potential. A loose mounting screw can increase thermal resistance by 30 percent or more and cause localized overheating under high load.
Driving the IRFP2907PBF directly from a 3.3 V or 5 V logic GPIO will leave it in the linear region, dissipating massive power and likely destroying the device. Always use a true gate-driver IC capable of delivering at least 10 V V_GS at the required peak gate current (roughly 1 A for a few hundred nanoseconds). For low-side switching, dedicated gate drivers such as the IRS4428STRPBF in the XAIPART catalog are drop-in solutions.
Compliance Information
Pb-free and RoHS compliant per Infineon product page and Mouser listing. Not AEC-Q100 qualified (use automotive-grade variants if required). Halogen-free status not explicitly stated in the verified web data - left as unknown.
