IRF1405PBF vs IRFP2907PBF موازنہ
تفصیلی ساتھ ساتھ موازنہ از IRF1405PBF بذریعہ Infineon اور IRFP2907PBF بذریعہ Infineon. اہم خصوصیات، برقی پیرامیٹرز، پیکیجنگ، لائف سائیکل اسٹیٹس، قیمتوں اور دستیابی کا موازنہ کریں تاکہ آپ کی ڈیزائن ضروریات کے لیے بہترین کمپوننٹ کا تعین ہو سکے۔
خصوصیات کا موازنہ
| پیرامیٹر | IRF1405PBF | IRFP2907PBF |
|---|---|---|
| برانڈ | Infineon | Infineon |
| زمرہ | MOSFETs | MOSFETs |
| لائف سائیکل کی حالت | فعال | فعال |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | — |
| ٹرانزسٹر کی قسم | N-Channel MOSFET | — |
| Technology | HEXFET (Stripe Planar cell structure) | HEXFET Stripe Planar DMOS (N-Channel) |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | — |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | — |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | — |
| Operating Junction Temperature (T_J max) | 175 C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| پیکیج | TO-220AB (through-hole) | — |
| ماؤنٹنگ ٹائپ | Through Hole | — |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | — |
| RoHS اسٹیٹس | PbF suffix indicates lead-free / RoHS compliant | — |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | — |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | — |
| Part Number | — | IRFP2907PBF |
| Drain-to-Source Voltage (V_DSS) | — | 75 V |
| Continuous Drain Current (I_D) at T_C = 25 C | — | 209 A |
| Static Drain-to-Source On-Resistance (R_DS(on)) | — | 4.5 mOhm at V_GS = 10 V |
| Power Dissipation (P_D) at T_C = 25 C | — | 470 W |
| Total Gate Charge (Q_g) | — | 410 nC |
| Maximum Junction Operating Temperature | — | +175 C |
| Package / Mounting Type | — | TO-247AC (Through Hole) |
| پن کی تعداد | — | 3 (Gate, Drain, Source) |
| RoHS Compliance | — | Yes (Pb-free) |
| Avalanche Rated | — | Yes (repetitive avalanche rated) |
| Body Diode | — | Integral (no external anti-parallel diode required) |
| Lead-Free | — | Yes |