IRF1407PBF vs IRF1010EPBF Comparison

Detailed side-by-side comparison of IRF1407PBF by Infineon and IRF1010EPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF1407PBF IRF1010EPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.86 $0.45
FET Type N-Channel —
Technology HEXFET (stripe-planar MOSFET) HEXFET Power MOSFET
Drain-Source Voltage (VDS) 75 V 60 V
Continuous Drain Current (ID) at TC=25C 130 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC=25C 330 W —
On-Resistance RDS(on) at VGS=10V 7.8 mOhm (typical) —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS threshold typical/min/max] —
Gate Charge (Qg) 160 nC (typical) —
Maximum Junction Temperature 175 C —
Operating Temperature Range -55 C to +175 C —
Package TO-220AB (through-hole, 3 leads) TO-220AB
Mounting Type Through Hole Through Hole
Lead-Free / RoHS Lead-free, RoHS compliant (PBF suffix) —
Avalanche Rating Repetitive avalanche rated —
Polarity — N-Channel
Continuous Drain Current (ID) — 84 A at Tc
Power Dissipation (PD) — 200 W at Tc
On-Resistance (RDS(on)) — 12 mOhm
Total Gate Charge (Qg) — 86.6 nC
Configuration — Single FET
RoHS Status — RoHS3 Compliant
MSL Level — 3 (168 Hours)
Operating Temperature — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Rise Time / Fall Time — [DATA_NEEDED: switching times]
Thermal Resistance (RthJC) — [DATA_NEEDED: thermal resistance junction to case]
Input Capacitance (Ciss) — [DATA_NEEDED: input capacitance]

Datasheets & Resources

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