IRF1407PBF vs IRF1010EPBF 비교
다음의 상세 나란히 비교: IRF1407PBF 제조: Infineon 및 IRF1010EPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF1407PBF | IRF1010EPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.86 | $0.45 |
| FET Type | N-Channel | — |
| Technology | HEXFET (stripe-planar MOSFET) | HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 75 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 130 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC=25C | 330 W | — |
| On-Resistance RDS(on) at VGS=10V | 7.8 mOhm (typical) | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS threshold typical/min/max] | — |
| Gate Charge (Qg) | 160 nC (typical) | — |
| Maximum Junction Temperature | 175 C | — |
| 동작 온도 범위 | -55 C to +175 C | — |
| 패키지 | TO-220AB (through-hole, 3 leads) | TO-220AB |
| 실장 유형 | Through Hole | Through Hole |
| Lead-Free / RoHS | Lead-free, RoHS compliant (PBF suffix) | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) | — | 84 A at Tc |
| Power Dissipation (PD) | — | 200 W at Tc |
| On-Resistance (RDS(on)) | — | 12 mOhm |
| Total Gate Charge (Qg) | — | 86.6 nC |
| Configuration | — | Single FET |
| RoHS 상태 | — | RoHS3 Compliant |
| MSL 레벨 | — | 3 (168 Hours) |
| 동작 온도 | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Rise Time / Fall Time | — | [DATA_NEEDED: switching times] |
| Thermal Resistance (RthJC) | — | [DATA_NEEDED: thermal resistance junction to case] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |