IRF150DM115XTMA1 vs BSC019N04LSTATMA1 Comparison
Detailed side-by-side comparison of IRF150DM115XTMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF150DM115XTMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRF150DM115XTMA1 | — |
| Technology | OptiMOS 5 (N-channel, normal level) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 150 V | 40 V |
| Continuous Drain Current (ID) | [DATA_NEEDED: ID @ 25C and TC] A | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max @ VGS=10V] mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] V | — |
| Gate Charge (QG) | [DATA_NEEDED: total QG @ VGS=10V] nC | — |
| Avalanche Rated | 100% avalanche tested | Yes |
| Package | DirectFET (double-side cooled, ultra-thin) | TDSON-8 (SuperSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity / Channel Type | N-Channel | — |
| Operating Temperature Range | [DATA_NEEDED: Tj max] C | -55 C to +150 C |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| RoHS Status | Compliant (lead-free per datasheet) | Compliant |
| Gate Drive Level | Normal-level (10 V drive) | — |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Lead-Free / Halogen-Free | — | Yes / Yes |