IRF150DM115XTMA1 vs BSC019N04LSTATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF150DM115XTMA1 sa pamamagitan ng Infineon at BSC019N04LSTATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF150DM115XTMA1 IRF150DM115XTMA1 - 150V OptiMOS 5 N-FET | Infineon

IRF150DM115XTMA1 - 150V OptiMOS 5 N-FET | Infineon

IRF150DM115XTMA1 ✓ Nakahanda
Infineon
BSC019N04LSTATMA1 BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF150DM115XTMA1 BSC019N04LSTATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number IRF150DM115XTMA1 —
Technology OptiMOS 5 (N-channel, normal level) OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 150 V 40 V
Continuous Drain Current (ID) [DATA_NEEDED: ID @ 25C and TC] A —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max @ VGS=10V] mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] V —
Gate Charge (QG) [DATA_NEEDED: total QG @ VGS=10V] nC —
Avalanche Rated 100% avalanche tested Yes
Packhaging DirectFET (double-side cooled, ultra-thin) TDSON-8 (SuperSO8) 5x6 mm
Uri ng Pagpapasok Surface Mount Surface Mount
Polarity / Channel Type N-Channel —
Hanay ng Temperature na Operasyon [DATA_NEEDED: Tj max] C -55 C to +150 C
Level ng MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Tindminan RoHS Compliant (lead-free per datasheet) Compliant
Gate Drive Level Normal-level (10 V drive) —
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Lead-Free / Halogen-Free — Yes / Yes

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