IRF520NPBF vs IRF5210PBF Comparison
Detailed side-by-side comparison of IRF520NPBF by Infineon and IRF5210PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF520NPBF | IRF5210PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $2.52 |
| Manufacturer | Infineon Technologies | β |
| Series | HEXFET | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (V_DSS) | 100 V | β |
| Continuous Drain Current (I_D) at Tc | 9.7 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | β |
| Gate-to-Source Voltage (V_GS) max | Β±20 V | β |
| R_DS(on) max at V_GS=10V | 200 mOhm | β |
| Total Gate Charge (Q_g) | 16.7 nC | β |
| Power Dissipation (P_D) at Tc | 48 W | β |
| Operating Temperature Range | -55C to +175C | -55 C to +175 C (junction) |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant (Pb-free) | β |
| Lead-Free Finish | Yes (PBF suffix) | β |
| Technology | HEXFET (vertical DMOS) | HEXFET (Fifth Generation) |
| Transistor Type | β | P-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | -100 V |
| Continuous Drain Current (Id) at Tc | β | -40 A |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Threshold Voltage (Vgs(th)) | β | -2 V to -4 V (typical -2 V) |
| On-Resistance Rds(on) at Vgs=-10V | β | 60 milliohms |
| Total Gate Charge (Qg) | β | 120 nC |
| Power Dissipation (Pd) at Tc | β | 200 W |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |
| Tab Connection | β | Electrically tied to Drain |
| Pin Configuration | β | Gate / Drain (tab) / Source (G-D-S, front view) |