IRF5210PBF - -100V P-Channel 40A HEXFET MOSFET | Infineon
MPN: IRF5210PBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.01 | $4.01 |
| 10 | $3.61 | $36.10 |
| 100 | $3.21 | $321.00 |
| 500 | $2.85 | $1,425.00 |
| 1,000 | $2.52 | $2,520.00 |
Drop-in alternatives for IRF5210PBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF5210STRLPBF
β Drop-Inπ Reference alternative (not in catalog)
IRF5210PBF
β Drop-Inβ In Stock
$2.52 / Unit
View Datasheet βIRF5210SPBF
β Drop-Inπ Reference alternative (not in catalog)
VBM2104N
β Drop-Inπ Reference alternative (not in catalog)
IRF4905PBF
β Drop-Inβ In Stock
$0.95 / Unit
View Datasheet βIRF5210PBF Maximum Ratings & Electrical Characteristics
| Transistor Type | P-Channel MOSFET |
| Drain-Source Voltage (Vds) | -100 V |
| Continuous Drain Current (Id) at Tc | -40 A |
| Gate-Source Threshold Voltage (Vgs(th)) | -2 V to -4 V (typical -2 V) |
| On-Resistance Rds(on) at Vgs=-10V | 60 milliohms |
| Total Gate Charge (Qg) | 120 nC |
| Power Dissipation (Pd) at Tc | 200 W |
| Operating Temperature Range | -55 C to +175 C (junction) |
| Package | TO-220AB (through-hole) |
| Mounting Type | Through Hole |
| Technology | HEXFET (Fifth Generation) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) |
| Tab Connection | Electrically tied to Drain |
| Pin Configuration | Gate / Drain (tab) / Source (G-D-S, front view) |
IRF5210PBF Pin Configuration
| Pin 1 | Gate β Gate control input; pull 10V below source for full enhancement |
| Pin 2 | Drain β Drain terminal; also electrically bonded to the metal tab |
| Pin 3 | Source β Source terminal; reference node for gate drive |
Safe Operating Area (DC, TC = 25 C)
Typical Applications
IRF5210PBF is suitable for 6 applications: 24V Industrial High-Side Load Switch, DC Motor Driver (H-Bridge High-Side), Power OR-ing for Redundant Supplies, Solenoid and Valve Driver, Hot-Swap / Inrush Current Limiter, Uninterruptible Power Supply (UPS) Battery Switch.
24V Industrial High-Side Load Switch
The IRF5210PBF is ideal for high-side switching on 24V industrial buses. With a -100V Vds rating providing 4x voltage margin over a 24V rail, -40A continuous drain current, and 60 milliohm typical Rds(on) at Vgs = -10V, it dissipates only ~96 mW of conduction loss at 40A load. The P-Channel architecture simplifies gate drive: pulling the gate to 0V relative to the 24V source fully enhances the device, eliminating the bootstrap or charge-pump circuitry required by equivalent N-Channel high-side switches. Designers place it between the 24V rail and the load with a 10k pull-up on the gate and a logic-level NMOS pulling the gate low for ON control.
Recommended
DC Motor Driver (H-Bridge High-Side)
The IRF5210PBF serves as the high-side switch in discrete H-bridge motor driver circuits. Its -40A continuous drain current covers most sub-1HP brushed DC motors, while the 200W power dissipation rating and TO-220AB thermal performance (around 0.75 C/W junction-to-case) allow sustained motor currents without external heatsinking up to 30A. The P-Channel configuration eliminates the need for high-side gate drivers, reducing BOM cost. Pair it with N-Channel low-side switches (e.g., IRFZ44NSTRLPBF) and a small gate resistor network for slew-rate control to suppress EMI in PWM motor control loops.
Recommended
Power OR-ing for Redundant Supplies
In redundant 24V or 48V power systems, the IRF5210PBF is used as an OR-ing MOSFET to block reverse current flow between paralleled supplies. Its -100V Vds withstands transients on industrial DC buses, while the low 60 milliohm Rds(on) minimizes voltage drop between the supply and the load, preserving efficiency. The intrinsic body diode provides initial turn-on conduction, after which the gate is pulled low to fully enhance the channel and minimize dissipation. The 175 C junction temperature rating supports operation in tightly enclosed telecom and server power shelves.
Recommended
Solenoid and Valve Driver
Industrial solenoid drivers benefit from the IRF5210PBF's P-Channel high-side architecture and 40A pulse capability. Driving a 24V solenoid from a low-voltage microcontroller is straightforward: a logic-level NPN transistor pulls the gate of the IRF5210PBF low to energize the coil. The MOSFET's avalanche rating absorbs the inductive kick when the solenoid is de-energized, eliminating the need for external freewheeling diodes in many circuits. The 60 milliohm Rds(on) keeps switch dissipation low during the steady-state hold, enabling thermally compact DIN-rail mounted designs.
Recommended
Hot-Swap / Inrush Current Limiter
The IRF5210PBF is well-suited to hot-swap controller circuits that need to gracefully apply power to a board while limiting inrush into bulk capacitors. With -40A current handling and P-Channel high-side placement, it can carry the full load of a typical -48V telecom board while the gate is ramped slowly to control di/dt. The 120 nC total gate charge enables simple single-stage RC ramp networks. Its 100V Vds rating easily tolerates -48V systems plus transient spikes, and the 200W TO-220 dissipation allows sustained fault current limiting without immediate thermal shutdown.
Recommended
Uninterruptible Power Supply (UPS) Battery Switch
In UPS battery backup designs, the IRF5210PBF serves as the disconnect MOSFET between the battery stack and the inverter. Its -100V Vds covers 24V and 48V battery configurations with substantial margin, while the 40A continuous rating supports inverter power levels up to ~2 kW. The P-Channel configuration allows the battery negative to remain common-grounded, simplifying the inverter gate drive. Its HEXFET avalanche rating is critical during abrupt load steps where the battery inductance can produce transient over-voltage events.
Recommended
Recommended Products Summary
Engineering reference data for IRF5210PBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF5210STRLPBF | IRF5210PBF | VBM2104N | IRF4905PBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi | Infineon Technologies |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Drain-Source Voltage (Vds) | -100 V | -100 V | -100 V | -55 V (within ~45% drop, drop-in only on package) | |
| Continuous Drain Current (Id) | -40 A | -40 A | -40 A | -74 A (higher current rating) | |
| Rds(on) at Vgs=-10V | 60 milliohms | 60 milliohms | 60 milliohms | 20 milliohms (lower conduction loss) | |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | |
| Total Gate Charge (Qg) | 120 nC | 120 nC | [DATA_NEEDED] | 180 nC | |
| Power Dissipation (Pd) | 200 W | 200 W | [DATA_NEEDED] | 200 W |
Key Differentiators
- P-Channel high-side simplicity (vs IRFZ44NSTRLPBF (N-Channel low-side))
- Mature Infineon HEXFET silicon (vs VBM2104N (Chinese-brand VBsemi))
- Wide 4x voltage margin (vs IRF4905PBF (-55V Vds))
Design Notes
Estimated: At -40A continuous and Rds(on) of 60 milliohms (Vgs=-10V), conduction loss is approximately 96 W. The TO-220AB junction-to-case thermal resistance is around 0.75 C/W, so a heatsink rated at <= 0.5 C/W keeps junction temperature below 125 C in 25 C ambient. Without a heatsink, the part will thermal-limit quickly at full load.
The TO-220AB metal tab is electrically bonded to the Drain. When mounting to a grounded heatsink or chassis, use a silicone insulator pad (Bergquist Sil-Pad or similar) and an insulating shoulder washer on the mounting screw to prevent a short to the heatsink. The Drain tab is also the primary thermal path; do not rely on the TO-220AB leads for heat removal.
Always drive the gate to at least -10V relative to source to guarantee full enhancement and minimum Rds(on). Driving only to Vgs(th) (~-2V to -4V) leaves the MOSFET in its linear region, causing severe dissipation. Add a 10k pull-up resistor from gate to source to keep the device OFF by default and prevent false turn-on from dv/dt-induced gate coupling.
Keep the gate drive loop physically small: place the gate pull-down resistor (or driver transistor) within 1-2 cm of the gate pin to minimize parasitic inductance. Long gate traces can ring during switching and exceed the Vgs absolute maximum of +/-20V, destroying the gate oxide. A 10-100 ohm gate resistor in series damps this ringing.
Compliance Information
PBF suffix denotes lead-free / RoHS-compliant construction. Originally International Rectifier (acquired by Infineon 2015); current production under Infineon Technologies brand.
