Infineon

IRLZ34NPBF - 55V 30A N-Channel HEXFET MOSFET | Infineon

MPN: IRLZ34NPBF ✓ Active
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55 V Vdss 30 A Id 35 mOhm Rds(on) TO-220AB (through-hole, 3 leads + tab) Package
From $0.65 USD / Unit
MOQ: 1 |
Price updated: 2026-09-14
Volume Pricing
Qty Unit Price Extended
1 $1.62 $1.62
10 $1.35 $13.50
100 $0.98 $98.00
500 $0.79 $395.00
1,000 $0.65 $650.00
ℹ️ All prices are in USD

Drop-in alternatives for IRLZ34NPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IRLZ44NPBF

✅ Drop-In
Infineon
📦 TO-220AB
N-Channel · 55 V · 47 A · 160 A · ±16 V · 1.0 V to 2.0 V (typ 1.5 V) · 22 mΩ max at VGS=5V, ID=25A · 32 nC

✓ In Stock

$0.6779 / Unit

View Datasheet →

IRLZ34NSTRLPBF

✅ Drop-In
Infineon
📦 TO-220AB
N-Channel · 55 V · 30 A · 110 A · 35 mOhm (typical) · Logic-level (5 V drive compatible) · 16.7 nC · 3.8 W

✓ In Stock

$0.58 / Unit

View Datasheet →

NTP30N06

✅ Drop-In
📦 TO-220AB
Same TO-220AB pinout, VDS=60 V vs 55 V (+9%), ID=30 A (same), Rds(on)=40 mOhm vs 35 mOhm (+14%); logic-level gate same

📋 Reference alternative (not in catalog)

IRF3205

✅ Drop-In
📦 TO-220AB
Same TO-220AB pinout, VDS=55 V (same), ID=110 A vs 30 A (+267%), Rds(on)=8.0 mOhm vs 35 mOhm (-77%); STANDARD gate (10 V), NOT logic-level

📋 Reference alternative (not in catalog)

IRFZ44NSTRLPBF

✅ Drop-In
Infineon
📦 TO-220AB
N-Channel · Enhancement · 55 V · 49 A · [DATA_NEEDED: pulsed drain current] · ±20 V · [DATA_NEEDED: gate threshold voltage] · 17.5 mOhm at VGS=10V

✓ In Stock

$0.93 / Unit

View Datasheet →

IRLZ34NPBF Maximum Ratings & Electrical Characteristics

Manufacturer Infineon (formerly International Rectifier)
Part Number Suffix PBF = Lead-free (Pb-free), Tube packaging
Transistor Type N-Channel HEXFET Power MOSFET
Drain-to-Source Voltage (VDS) 55 V
Continuous Drain Current (ID) at Tc=25 C 30 A
On-Resistance Rds(on) max @ VGS=10 V 35 mOhm
Gate Threshold Voltage VGS(th) 1.0 V to 2.0 V (logic-level)
Total Gate Charge (Qg) 16.7 nC (typical)
Power Dissipation (PD) at Tc=25 C 68 W
Operating Junction Temperature -55 C to +175 C
Package TO-220AB (through-hole, 3 leads + tab)
Mounting Type Through Hole
RoHS Status Compliant (Pb-free PBF suffix)
MSL Level Not applicable (through-hole)

IRLZ34NPBF Pin Configuration

TO-220 Package Pinout Diagram TO-220 3-pin vertical mount with tab, JEDEC. 1 2 3 TO-220
Pin 1 Gate — MOSFET gate input (logic-level, drive with 4-5 V or higher)
Pin 2 Drain — MOSFET drain (also connected to metal tab)
Pin 3 Source — MOSFET source (ground reference in low-side applications)
Pin TAB Drain — Metal tab - electrically tied to Drain (pin 2); mount to heatsink

Safe Operating Area (DC, Tc=25 C)

DC Continuous Operation

Typical Applications

IRLZ34NPBF is suitable for 6 applications: Brushed DC Motor Speed Control (PWM), Solenoid and Relay Driver, Battery Protection and Load Switch (12-24 V Packs), Synchronous Rectifier Secondary Side (Low Voltage SMPS), LED Driver and High-Current Lighting Switch, Industrial Automation Load Switch.

🏭

Brushed DC Motor Speed Control (PWM)

The IRLZ34NPBF is well-suited to brushed DC motor speed control via PWM at 1-50 kHz because of its 16.7 nC total gate charge, which lets a 5 V MCU GPIO toggle the gate directly without a dedicated gate-driver IC. The 35 mOhm Rds(on) at 10 V VGS keeps conduction loss manageable at 5-10 A continuous motor current, while the logic-level threshold ensures the MCU can fully enhance the channel. In a typical low-side PWM circuit the IRLZ34NPBF sits between the motor and ground; its TO-220AB tab is screwed to a small heatsink that handles up to 68 W at Tc=25 C. Designers should add a 10 kOhm gate-to-source pulldown resistor to keep the MOSFET off during MCU reset, preventing inrush currents through partially-strobed gates.

Solenoid and Relay Driver

Driving 12 V or 24 V solenoids from a microcontroller is a classic IRLZ34NPBF use case. The logic-level gate accepts a 3.3 V or 5 V GPIO directly, while the 30 A continuous current rating easily handles the inrush of a solenoid coil (typically 1-3 A steady, 5-10 A inrush). The 55 V VDS provides ample headroom for the flyback voltage when the coil is de-energized - pair the IRLZ34NPBF with a 30 V TVS or schottky diode across the coil for additional protection. The TO-220AB through-hole package mounts easily on a PCB with a hand-soldered tab to a copper pour for thermal relief during repetitive switching.

🔋

Battery Protection and Load Switch (12-24 V Packs)

In e-bike, power-tool, and 24 V industrial battery packs, the IRLZ34NPBF serves as a low-side load-switch disconnect. Its 30 A continuous rating covers the typical 10-15 A peak draw of mid-power tools, while the logic-level gate allows direct control from a battery-management MCU. The 55 V VDS protects against 24 V pack transients during regenerative braking or inductive kickback. A 100 kOhm gate-source resistor prevents unintended turn-on from leakage paths, and the TO-220AB tab provides a rugged mechanical mount that survives vibration in power-tool housings. For packs above 24 V nominal, the 60 V IRLZ44N variant offers additional VDS headroom.

💡

Synchronous Rectifier Secondary Side (Low Voltage SMPS)

On the secondary side of a 12 V or 5 V SMPS, the IRLZ34NPBF can replace a Schottky diode as a synchronous rectifier. Its 35 mOhm Rds(on) is lower than the forward voltage drop of a 30 A Schottky (typically 0.4-0.5 V at full load), reducing conduction loss by 80% or more. The logic-level gate is compatible with most synchronous-rectifier controller ICs that output 5 V. The 55 V VDS provides more than enough headroom for 12 V or 24 V secondaries. Designers should add dead-time control in the controller to prevent shoot-through when the high-side switch turns on, and use a small Schottky anti-parallel to handle the brief dead-time interval.

💡

LED Driver and High-Current Lighting Switch

For 12 V or 24 V LED strips and high-brightness automotive lighting, the IRLZ34NPBF acts as a low-side PWM dimmer. Its logic-level gate accepts a 5 V PWM signal from an MCU at 200 Hz to 2 kHz, while the 30 A continuous current covers multi-meter LED strip installations up to 360 W at 12 V. The 55 V VDS is sufficient for 24 V LED buses and withstands automotive load-dump transients when paired with a TVS. The TO-220AB package dissipates up to 68 W with adequate heatsinking, well beyond what is needed for typical 5-10 A LED loads. A gate-source pulldown resistor prevents flicker during MCU boot-up.

🏭

Industrial Automation Load Switch

In 24 V industrial PLC output modules, the IRLZ34NPBF serves as a low-side load switch for solenoid valves, indicator lamps, and small DC loads. The 55 V VDS handles 24 V bus transients up to the IEC 61131-2 surge profile, and the 30 A current rating exceeds the typical 0.5-2 A per-channel load. The logic-level gate allows direct drive from a 5 V PLC logic IC without optocoupler + gate-driver complexity. The TO-220AB through-hole construction withstands industrial vibration and offers a long-term solder-joint reliability advantage over surface-mount alternatives. Designers should add a 10 kOhm gate pulldown and a TVS clamp across inductive loads.

What is the drain-to-source voltage rating of the IRLZ34NPBF?
The IRLZ34NPBF has a VDS rating of 55 V, making it suitable for 12 V and 24 V bus systems with substantial transient headroom. According to the Infineon datasheet for this fifth-generation HEXFET, the 55 V breakdown comfortably exceeds the typical 36 V transient seen in 24 V industrial environments, allowing designers to skip TVS suppression on lightly inductive loads. Always derate VDS by 80% for reliable long-term operation.
Is the IRLZ34NPBF a logic-level MOSFET that can be driven from a 3.3 V or 5 V microcontroller?
Yes, the IRLZ34NPBF is a logic-level N-channel MOSFET with VGS(th) of 1.0 V to 2.0 V and full enhancement at VGS=5 V. The Infineon datasheet confirms Rds(on) is fully specified at VGS=10 V but the device is part of the Logic-Level HEXFET family ('L' suffix), which is optimized for 4-5 V gate drive. A 3.3 V MCU GPIO can drive it directly at the cost of slightly higher Rds(on); for lowest loss, use a 5 V rail to drive the gate.
What is the continuous drain current rating of the IRLZ34NPBF?
The IRLZ34NPBF is rated for 30 A continuous drain current at Tc=25 C and approximately 27 A per distributor summaries. The Infineon datasheet shows this current de-rates linearly with case temperature; at Tc=100 C the device can carry roughly 20-22 A depending on mounting. Designers should compute junction temperature rise using PD x RthJC (RthJC = 2.2 C/W typical for TO-220) before assuming the 30 A figure in real thermal conditions.
What is the on-resistance of the IRLZ34NPBF at 5 V and 10 V gate drive?
The IRLZ34NPBF specifies a maximum Rds(on) of 35 mOhm at VGS=10 V. At VGS=5 V the on-resistance is slightly higher (typically 40-50 mOhm) because the channel is not fully enhanced. This difference is critical for battery-powered designs where every milliohm of conduction loss matters; a 10 V gate-drive rail gives the lowest loss but is rarely available in 12 V systems, so 5 V drive is the practical compromise.
Where can I buy the IRLZ34NPBF online and what is the current price?
The IRLZ34NPBF is in stock at DigiKey (811725), Mouser, and Octopart-listed distributors as of 2026-09-14. Pricing for the TO-220AB tube-packaged version starts around $1.62 per unit at qty 1, falling to approximately $0.65 per unit at qty 1000. Octopart aggregates 12 distributors for real-time stock and lead-time comparison. For volume orders beyond 5000 units, requesting a quote directly from Infineon or an authorized distributor typically yields 10-20% additional savings.
What is the lead time for the IRLZ34NPBF?
The IRLZ34NPBF has a typical factory lead time of 8-12 weeks from Infineon when ordered directly, but distributor stock at DigiKey and Mouser ships same-day as of 2026-09-14. For production volumes above 5000 units, plan ahead and order at least 10 weeks before assembly. The through-hole TO-220AB package is widely second-sourced, so if Infineon lead time is too long, the IRLZ34N (non-PBF) variant or onsemi NTP30N06 or Vishay IRF3205 may serve as drop-in equivalents.
IRLZ34NPBF vs IRLZ44N - which is better for a 24 V motor drive?
The IRLZ34NPBF and IRLZ44N are pin-compatible TO-220AB logic-level MOSFETs, but the IRLZ44N has a higher 55 V VDS rating is matched but it carries 47 A continuous current and 22 mOhm Rds(on), versus the IRLZ34N's 30 A and 35 mOhm. For a 24 V brushed DC motor drive pulling 15 A continuous, the IRLZ34NPBF is more cost-effective (typically 30% cheaper); choose the IRLZ44N only if you need the extra current margin or lower conduction loss.
What is the best drop-in replacement for the IRLZ34NPBF in the same TO-220 footprint?
The best drop-in replacements in the same TO-220AB footprint include the Infineon IRLZ44N (47 A, lower Rds(on)) and the onsemi NTP30N06 (60 V, 30 A). The IRLZ44N is the closest same-family substitute with identical gate drive levels, while the NTP30N06 offers slightly higher VDS headroom. All three share the standard TO-220AB pinout (G-D-S) so they can be soldered onto the same land pattern without PCB modification.
Where can I download the IRLZ34NPBF datasheet PDF?
The official Infineon IRLZ34NPBF datasheet PDF is hosted at infineon.com/assets/row/public/documents/24/49/infineon-irlz34n-datasheet-en.pdf. The document is approximately 9 pages long and covers absolute maximum ratings, thermal resistance, on-resistance curves, safe operating area, and typical switching waveforms. For convenience the same datasheet is also mirrored on alldatasheet.com and datasheetq.com, but the Infineon URL is the authoritative source for the latest revision.
What is the TO-220AB pinout of the IRLZ34NPBF?
The IRLZ34NPBF uses the standard TO-220AB 3-lead pinout viewed from the front (tab facing away): Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source. The metal tab is electrically connected to the Drain. This same pinout is shared by virtually every TO-220AB N-channel MOSFET, which makes the package ideal for breadboarding and easy cross-vendor substitution. Always confirm by checking the part marking on the device face versus the tab orientation before soldering.
Can I replace the IRLZ34NPBF with a Vishay or onsemi equivalent?
Yes, onsemi and Vishay both offer TO-220AB drop-in equivalents with similar specs. The onsemi NTP30N06 (60 V, 30 A) and Vishay IRF3205 (55 V, 110 A) are both pin-compatible at the TO-220AB level, though the IRF3205 has a standard 10 V gate threshold (not logic-level), so it cannot be driven directly from a 3.3 V or 5 V MCU without a gate-driver. For direct logic-level swap, the NTP30N06 is the safer choice.
Is the IRLZ34NPBF RoHS compliant and lead-free?
Yes, the 'PBF' suffix in IRLZ34NPBF explicitly denotes lead-free (Pb-free) construction. The part is fully RoHS compliant and uses matte-tin leadframes per Infineon's product documentation. For REACH SVHC compliance, no substances above the 0.1% w/w threshold are present. The through-hole TO-220AB package does not require MSL (Moisture Sensitivity Level) handling since it is not a surface-mount component.
What are the key specifications of the IRLZ34NPBF that engineers should know?
Key IRLZ34NPBF specifications engineers need: VDS=55 V, ID=30 A at Tc=25 C, Rds(on)=35 mOhm max at VGS=10 V, VGS(th)=1.0-2.0 V (logic-level), Qg=16.7 nC, PD=68 W at Tc=25 C, and TO-220AB package. According to the Infineon datasheet, the logic-level gate and 16.7 nC total gate charge make it well-suited for direct 5 V PWM drive at frequencies up to 50 kHz from microcontrollers without a dedicated gate-driver IC.
Hey Google, what can replace the IRLZ34NPBF if it is out of stock?
If the IRLZ34NPBF is out of stock, drop-in TO-220AB equivalents include the Infineon IRLZ44N (47 A, 22 mOhm), onsemi NTP30N06 (60 V, 30 A), and Vishay IRF3205 (55 V, 110 A, standard gate). All share the standard TO-220AB G-D-S pinout. Per the Infineon datasheet family, the IRLZ44N is the closest logic-level replacement; the IRF3205 is cheaper but requires 10 V gate drive, so add a gate-driver or charge-pump if your MCU only outputs 5 V.
Is the IRLZ34NPBF the same as the IRLZ34N?
The IRLZ34NPBF and IRLZ34N are electrically identical; the 'PBF' suffix only indicates Pb-free (lead-free) terminal finish and tube packaging. Both are 55 V, 30 A, logic-level N-channel HEXFETs in the same TO-220AB package. According to the Infineon part-numbering convention, dropping the PBF suffix yields the older lead-containing version which is no longer RoHS compliant and is being phased out of new designs. Use the PBF variant for all new production.

Engineering reference data for IRLZ34NPBF — comparison, design guidance, and compliance information.

Selection Guide

Choose the IRLZ34NPBF when you need a logic-level (5 V gate drive) N-channel MOSFET in a TO-220AB through-hole package for a 12 V or 24 V load-switch, low-side PWM motor drive, or solenoid driver, where 30 A continuous current and 35 mOhm Rds(on) are sufficient. Pick the IRLZ44N instead if you need higher current (47 A) or lower conduction loss (22 mOhm) in the same footprint and are willing to pay ~15-20% more. Pick the NTP30N06 from onsemi for cross-brand sourcing resilience - same TO-220AB footprint, 60 V VDS for slightly more transient margin, and 30 A continuous. Avoid the IRF3205 or IRFZ44N unless your gate-driver provides 10 V; they are not logic-level despite being pin-compatible. For new production always specify the PBF suffix for RoHS compliance.

Comparison with Alternatives

Parameter This Product IRLZ44N IRLZ34N NTP30N06 IRF3205 IRFZ44N
Brand Infineon Infineon Infineon onsemi Infineon Infineon
Package TO-220AB (through-hole) TO-220AB (through-hole) - same TO-220AB (through-hole) - same TO-220AB (through-hole) - same TO-220AB (through-hole) - same TO-220AB (through-hole) - same
VDS (Drain-to-Source Voltage) 55 V 55 V 55 V 60 V (+9%) 55 V 55 V
Continuous Drain Current (ID @ Tc=25 C) 30 A 47 A (+57%) 30 A (same) 30 A (same) 110 A (+267%) 49 A (+63%)
Rds(on) max @ VGS=10 V 35 mOhm 22 mOhm (-37%) 35 mOhm (same) 40 mOhm (+14%) 8.0 mOhm (-77%) 17.5 mOhm (-50%)
Gate Threshold VGS(th) 1.0 - 2.0 V (logic-level) 1.0 - 2.0 V (logic-level) 1.0 - 2.0 V (logic-level) 2.0 - 4.0 V (logic-level) 2.0 - 4.0 V (standard, NOT logic-level) 2.0 - 4.0 V (standard, NOT logic-level)
Logic-Level Gate (5 V Direct Drive) Yes Yes Yes Yes No (needs 10 V gate) No (needs 10 V gate)
Power Dissipation (Tc=25 C) 68 W 94 W (+38%) 68 W (same) [DATA_NEEDED] 200 W (+194%) 94 W (+38%)
RoHS Compliant Yes (PBF suffix) Yes No (legacy lead-containing) Yes Yes Yes

Key Differentiators

  • Higher current and lower Rds(on) in the same package (vs IRLZ44N)
  • RoHS-compliant Pb-free terminals (vs IRLZ34N (non-PBF))
  • 5 V logic-level direct drive without gate-driver IC (vs IRF3205 / IRFZ44N)

Design Notes

Estimated: at ID=10 A continuous and Rds(on)=35 mOhm, conduction loss is approximately 3.5 W. With TO-220AB RthJA=62 C/W (no heatsink, free air), the junction temperature would rise roughly 217 C above 25 C ambient - far above the 175 C limit. Add a heatsink with RthSA under 30 C/W (a 5 C/W clip-on heatsink suffices) to keep Tj under 130 C at 10 A. At ID=20 A, conduction loss rises to 14 W, demanding either a substantially larger heatsink or active airflow. Always compute Tj = Pd x RthJA + Tambient and stay under 125 C for long-term reliability margin.

The TO-220AB tab is internally connected to the Drain, so for low-side switching the tab is at ground potential when the MOSFET is OFF and at supply voltage when ON. For isolated mounting, use a mica or silicone insulator pad between the tab and the heatsink, plus a nylon shoulder washer on the mounting screw to prevent the screw from shorting to the tab. Without an insulator, the heatsink becomes a live heatsink at Vsupply potential - a safety hazard in 24 V and 48 V systems. Apply thermal compound between the tab and the insulator and between the insulator and the heatsink.

Always include a 10 kOhm gate-to-source pulldown resistor (Rgs) directly across the gate and source pins, physically close to the device. Without Rgs, the gate can float to VGS(th) due to Miller charge injection during high dV/dt switching events, causing partial turn-on, shoot-through, or sustained oscillation. Also, do not assume 'logic-level' MOSFETs are fully enhanced at 3.3 V; the IRLZ34NPBF VGS(th) max is 2.0 V but full Rds(on) requires 5 V or higher. Use 5 V or 10 V gate drive for lowest conduction loss. For switching applications above 50 kHz, a dedicated gate-driver (TC4420, UCC27517) reduces switching loss by 50%.

Minimize the gate-drive loop area by placing the gate resistor and pulldown resistor within 10 mm of the gate pin. Keep the high-current drain-source loop compact and use a ground plane on the source side to reduce parasitic inductance. For switching frequencies above 100 kHz, add a small RC snubber (10 Ohm + 1 nF) across drain-source to limit ringing. When using the TO-220AB in a high-side position, ensure sufficient copper area (at least 50 mm2) on the source side for thermal dissipation through the PCB, and route the gate return trace directly back to the driver IC rather than through a noisy ground plane.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

PBF suffix confirms lead-free terminal finish per Infineon part numbering. Through-hole TO-220AB package, not AEC-Q100 qualified - automotive designs should consider the IRF7507TRPBF or AEC-Q100-screened variants. REACH SVHC compliant to the 0.1% w/w threshold per Infineon product declarations.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

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