IRF540 vs IRF540NSTRLPBF Comparison
Detailed side-by-side comparison of IRF540 by STMicroelectronics and IRF540NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF540 | IRF540NSTRLPBF |
|---|---|---|
| Brand | STMicroelectronics | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.74 |
| FET Type | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDSS) | 100 V | — |
| Continuous Drain Current (ID) | 22 A (Tc) | — |
| Power Dissipation (PD) | 85 W (Tc) | — |
| RDS(on) Typical | 0.050 Ohm | — |
| RDS(on) Maximum at 10 V Gate Drive | 77 mOhm (family typ.) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Total Gate Charge] | — |
| Operating Junction Temperature | -55C to +175C | — |
| Avalanche Rating | Repetitive avalanche rated, 100% avalanche tested, data at 100C | — |
| Package | TO-220 (through hole) | D2PAK (TO-263), surface mount |
| Mounting Type | Through Hole | Surface Mount |
| Configuration | Single | — |
| Technology | Avalanche-rugged power MOSFET | HEXFET (IR MOSFET) |
| RoHS Status | unknown | Compliant (Pb-free) |
| Gate Drive Recommendation | 10 V for full enhancement | — |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| Operating Temperature Range | — | -55 C to +175 C |
| Packaging | — | Tape & Reel (13-inch reel) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized) |