IRF540 vs IRF540NSTRLPBF 对比
详细并排对比 IRF540 出自 STMicroelectronics 和 IRF540NSTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF540 | IRF540NSTRLPBF |
|---|---|---|
| 品牌 | STMicroelectronics | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.55 | $0.74 |
| FET Type | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDSS) | 100 V | — |
| Continuous Drain Current (ID) | 22 A (Tc) | — |
| Power Dissipation (PD) | 85 W (Tc) | — |
| RDS(on) Typical | 0.050 Ohm | — |
| RDS(on) Maximum at 10 V Gate Drive | 77 mOhm (family typ.) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Total Gate Charge] | — |
| 工作结温 | -55C to +175C | — |
| Avalanche Rating | Repetitive avalanche rated, 100% avalanche tested, data at 100C | — |
| 封装 | TO-220 (through hole) | D2PAK (TO-263), surface mount |
| 安装类型 | Through Hole | Surface Mount |
| Configuration | Single | — |
| Technology | Avalanche-rugged power MOSFET | HEXFET (IR MOSFET) |
| RoHS 状态 | unknown | Compliant (Pb-free) |
| Gate Drive Recommendation | 10 V for full enhancement | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| 工作温度范围 | — | -55 C to +175 C |
| Packaging | — | Tape & Reel (13-inch reel) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized) |