IRF540 vs IRF540NSTRLPBF Vergleich
Detaillierter Direktvergleich von IRF540 von STMicroelectronics und IRF540NSTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF540 | IRF540NSTRLPBF |
|---|---|---|
| Marke | STMicroelectronics | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,55 | $0,74 |
| FET Type | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDSS) | 100 V | — |
| Continuous Drain Current (ID) | 22 A (Tc) | — |
| Power Dissipation (PD) | 85 W (Tc) | — |
| RDS(on) Typical | 0.050 Ohm | — |
| RDS(on) Maximum at 10 V Gate Drive | 77 mOhm (family typ.) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Total Gate Charge] | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Avalanche Rating | Repetitive avalanche rated, 100% avalanche tested, data at 100C | — |
| Gehäuse | TO-220 (through hole) | D2PAK (TO-263), surface mount |
| Montageart | Through Hole | Surface Mount |
| Configuration | Single | — |
| Technology | Avalanche-rugged power MOSFET | HEXFET (IR MOSFET) |
| RoHS-Status | unknown | Compliant (Pb-free) |
| Gate Drive Recommendation | 10 V for full enhancement | — |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| Betriebstemperaturbereich | — | -55 C to +175 C |
| Packaging | — | Tape & Reel (13-inch reel) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized) |