IRF640NPBF vs IRFB7437PBF Comparison

Detailed side-by-side comparison of IRF640NPBF by Infineon and IRFB7437PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF640NPBF IRFB7437PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.88 $0.92
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at Tc 18 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Gate-to-Source Voltage (VGS) max ±20 V —
Static Drain-to-Source On-Resistance (RDS(on)) 150 mOhm max at VGS = 10 V —
Power Dissipation (PD) at Tc=25C 150 W —
Total Gate Charge (Qg) 44.7 nC 150 nC
Operating Junction Temperature -55C to +150C -55°C to +175°C
Technology HEXFET (5th Generation) StrongIRFET™, N-Channel Trench MOSFET
Transistor Type N-Channel Enhancement Mode —
Package TO-220AB (through-hole, 3-pin) TO-220AB (through-hole, 3 leads)
Mounting Type Through Hole Through Hole
Avalanche Energy Rated Yes —
dv/dt Rating Dynamic, rated —
RoHS Status Compliant Compliant
Lead-Free Yes (PBF suffix) —
Manufacturer Infineon (formerly International Rectifier) Infineon (formerly International Rectifier)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25°C) — 195 A
Silicon-Limited Drain Current — 250 A
R_DS(on) typ @ VGS=10V — 1.5 mΩ
R_DS(on) max @ VGS=10V — 2.0 mΩ
Gate-Source Threshold Voltage (VGS(th) typ) — 3.0 V (1.7 V min, 3.9 V max per datasheet family)
Miller Plateau Charge (Qgd) — 49 nC
Power Dissipation (PD @ Tc=25°C) — 230 W
Thermal Resistance Junction-to-Case (RθJC) — 0.62 °C/W
Lead Finish — Lead-free (PBF - Pb-free plating)
MSL Level — Not Applicable (through-hole package)
AEC-Q101 Automotive — Not qualified (industrial/consumer)

Datasheets & Resources

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