IRF640NPBF vs IRFB7437PBF 비교
다음의 상세 나란히 비교: IRF640NPBF 제조: Infineon 및 IRFB7437PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF640NPBF | IRFB7437PBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.88 | $0.92 |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | 150 nC |
| 동작 접합 온도 | -55C to +150C | -55°C to +175°C |
| Technology | HEXFET (5th Generation) | StrongIRFET™, N-Channel Trench MOSFET |
| 트랜지스터 유형 | N-Channel Enhancement Mode | — |
| 패키지 | TO-220AB (through-hole, 3-pin) | TO-220AB (through-hole, 3 leads) |
| 실장 유형 | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon (formerly International Rectifier) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 195 A |
| Silicon-Limited Drain Current | — | 250 A |
| R_DS(on) typ @ VGS=10V | — | 1.5 mΩ |
| R_DS(on) max @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 3.0 V (1.7 V min, 3.9 V max per datasheet family) |
| Miller Plateau Charge (Qgd) | — | 49 nC |
| Power Dissipation (PD @ Tc=25°C) | — | 230 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 0.62 °C/W |
| Lead Finish | — | Lead-free (PBF - Pb-free plating) |
| MSL 레벨 | — | Not Applicable (through-hole package) |
| AEC-Q101 Automotive | — | Not qualified (industrial/consumer) |